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Infineon Technologies AG RF Mixer and Detector Schottky Diode BAT24-02LS

Description
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz Summary of Features Low inductance LS = 0.2 nH (typical) Low capacitance C = 0.2 pF (typical) at 1 MHz TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint Pb-free (RoHS compliant) and halogen free Potential Applications For mixers and detectors in: Radar based systems and modules
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Suppliers

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Product
Description
Supplier Links
RF Mixer and Detector Schottky Diode - BAT24-02LS - Infineon Technologies AG
Neubiberg, Germany
RF Mixer and Detector Schottky Diode
BAT24-02LS
RF Mixer and Detector Schottky Diode BAT24-02LS
Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz Summary of Features Low inductance LS = 0.2 nH (typical) Low capacitance C = 0.2 pF (typical) at 1 MHz TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint Pb-free (RoHS compliant) and halogen free Potential Applications For mixers and detectors in: Radar based systems and modules

Infineon RF Schottky Diode is a silicon low barrier N-type of device with an integrated guard ring on-chip for overvoltage protection. Its low barrier height, small forward voltage diode and low junction capacitance, make BAT24 - 02LS a suitable choice for mixer and detector functions in applications whose frequencies are as high as 24 GHz


Summary of Features

  • Low inductance LS = 0.2 nH (typical)
  • Low capacitance C = 0.2 pF (typical) at 1 MHz
  • TSSLP-2-1 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
  • Pb-free (RoHS compliant) and halogen free

Potential Applications

For mixers and detectors in:

  • Radar based systems and modules
Supplier's Site Datasheet
END - OF - LIFE - BAT24-02LS - 1151503-BAT24-02LS - Win Source Electronics
Yishun, Singapore
END - OF - LIFE - BAT24-02LS
1151503-BAT24-02LS
END - OF - LIFE - BAT24-02LS 1151503-BAT24-02LS
Manufacturer: Infineon Technologies Win Source Part Number: 1151503-BAT24-02LS Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1151503-BAT24-02LS
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Supplier's Site

Technical Specifications

  Infineon Technologies AG Win Source Electronics
Product Category RF Diodes Schottky Diodes
Product Number BAT24-02LS 1151503-BAT24-02LS
Product Name RF Mixer and Detector Schottky Diode END - OF - LIFE - BAT24-02LS
Configuration Single
Diode Type Schottky
Diode Applications Detector; Mixer
Life Cycle Stage not for new design
RoHS Compliant RoHS
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