Infineon Technologies AG RF Diodes BAT1502LRHE6327XTSA1

The Schottky Diode BAT15-02LRH from Infineon is a single silicon RF diode designed for high-frequency applications, capable of operating up to 12 GHz. It features a low barrier height, low forward voltage of 0.25V (typical at 1mA), and low junction capacitance of 0.2pF at 1 MHz, making it suitable for mixer and detector functions. The diode is housed in a compact TSLP-2-7 package measuring 1 mm x 0.6 mm x 0.39 mm, and it is compliant with RoHS and halogen-free standards. It has a maximum reverse voltage of 4V and can handle a forward current of up to 110mA. The device is also ESD sensitive, requiring proper handling precautions. This diode is qualified for industrial applications according to JEDEC standards, ensuring reliability in demanding environments.