This Infineon RF Schottky diode is a silicon low barrier N-type device with an integrated guard ring on-chip for over-voltage protection. Its low barrier height, low forward voltage and low junction capacitance make BAT15-02ELS a suitable choice for mixer and detector functions in applications which frequencies are as high as 12 GHz.
Summary of Features
• Low inductance LS = 0.2 nH (typical)
• Low capacitance C = 0.2 pF (typical) at 1 MHz
• TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 footprint
• Pb-free, RoHS compliant and halogen free
Potential Applications
For mixer and detectors in:
• Mobile devices
• Modules and embedded systems
| Infineon Technologies AG | |
|---|---|
| Product Category | RF Diodes |
| Product Number | BAT15-02ELS |
| Product Name | RF Mixer and Detector Schottky Diode |
| Configuration | Single |
| Diode Type | Schottky |
| Diode Applications | Detector; Mixer |
| Life Cycle Stage | active and preferred |
| RoHS Compliant | RoHS |
