Infineon Technologies AG Power - Gate Driver ICs - 2EDL8124G 2EDL8124G

Description
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Domestic robots Integrated and discrete solutions for Personal Care products Power conversion Designers who used this product also designed with BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes IPP60R180CM8 | 600 V CoolMOS™ 8 IDH06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5 | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET BAS70-05W | Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet
Description
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Domestic robots Integrated and discrete solutions for Personal Care products Power conversion Designers who used this product also designed with BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes IPP60R180CM8 | 600 V CoolMOS™ 8 IDH06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5 | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET BAS70-05W | Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDL8124G - 2EDL8124G - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL8124G
2EDL8124G
Power - Gate Driver ICs - 2EDL8124G 2EDL8124G
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 48 V intermediate bus converter (IBC) Data center and AI data center solutions Domestic robots Integrated and discrete solutions for Personal Care products Power conversion Designers who used this product also designed with BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPL60R104C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSO220N03MD G | N-Channel Power MOSFET IDH20G65C5 | CoolSiC™ Schottky Diodes IPP60R180CM8 | 600 V CoolMOS™ 8 IDH06G65C5 | CoolSiC™ Schottky Diodes BSC040N10NS5 | N-Channel Power MOSFET BSZ070N08LS5 | N-Channel Power MOSFET BAS70-05W | Schottky Diodes BSC026N08NS5 | N-Channel Power MOSFET IPL60R105P7 | 500V-950V CoolMOS™ N-Channel Power MOSFET BSZ110N08NS5 | N-Channel Power MOSFET ICE2QR2280G-1 | CoolSET™ Quasi Resonant BSC047N08NS3 G | N-Channel Power MOSFET BSC065N06LS5 | N-Channel Power MOSFET BSC016N06NS | N-Channel Power MOSFET 1EDI20N12AF | Gate driver ICs IPD70R360P7S | 500V-950V CoolMOS™ N-Channel Power MOSFET IPZ60R040C7 | 500V-950V CoolMOS™ N-Channel Power MOSFET 1 2 3 4 5

EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8124G

The EiceDRIVER™ 2EDL8124G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.

This industry-leading 4 A version is recommended to reduce MOSFET switching losses. The 2EDL8124G has a truly differential input structure and built-in shoot-through protection making it the perfect choice for non-diagonally driven primary-side half-bridge stages in DC-DC brick converters.

All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.


Summary of Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Potential Applications

  • Telecom DC-DC converter
  • Datacom DC-DC converter
  • Two switch forward converter
  • Active clamp forward converter
  • Class D audio amplifier

Applications

  • 48 V intermediate bus converter (IBC)
  • Data center and AI data center solutions
  • Domestic robots
  • Integrated and discrete solutions for Personal Care products
  • Power conversion

Designers who used this product also designed with


  • BSZ110N08NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • BSC065N06LS5 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPZ60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPL60R104C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSO220N03MD G |
    N-Channel Power MOSFET
  • IDH20G65C5 |
    CoolSiC™ Schottky Diodes
  • IPP60R180CM8 |
    600 V CoolMOS™ 8
  • IDH06G65C5 |
    CoolSiC™ Schottky Diodes
  • BSC040N10NS5 |
    N-Channel Power MOSFET
  • BSZ070N08LS5 |
    N-Channel Power MOSFET
  • BAS70-05W |
    Schottky Diodes
  • BSC026N08NS5 |
    N-Channel Power MOSFET
  • IPL60R105P7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • BSZ110N08NS5 |
    N-Channel Power MOSFET
  • ICE2QR2280G-1 |
    CoolSET™ Quasi Resonant
  • BSC047N08NS3 G |
    N-Channel Power MOSFET
  • BSC065N06LS5 |
    N-Channel Power MOSFET
  • BSC016N06NS |
    N-Channel Power MOSFET
  • 1EDI20N12AF |
    Gate driver ICs
  • IPD70R360P7S |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPZ60R040C7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8124G
Product Name Power - Gate Driver ICs - 2EDL8124G
Driver Type Dual Gate Driver
Output Current 4 amps
Supply Voltage 8 to 20 volts
Propagation Delay 45 ns
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