Infineon Technologies AG Power - Gate Driver ICs - 2EDL8023G 2EDL8023G

Description
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 3D ToF camera for in-cabin monitoring system Consumer electronics Data center and AI data center solutions Telecommunication infrastructure
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Description
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 3D ToF camera for in-cabin monitoring system Consumer electronics Data center and AI data center solutions Telecommunication infrastructure
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Suppliers

Company
Product
Description
Supplier Links
Power - Gate Driver ICs - 2EDL8023G - 2EDL8023G - Infineon Technologies AG
Neubiberg, Germany
Power - Gate Driver ICs - 2EDL8023G
2EDL8023G
Power - Gate Driver ICs - 2EDL8023G 2EDL8023G
EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters. This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase. All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns. Summary of Features No need for external boot strap diode Fast MOSFET switching Strong pull-down current reduces risk of return-on from switching noise Low dead-time losses Inherent shoot-through protection -8 V/+15 V common mode rejection Benefits High power density High efficiency Strong MOSFET Reliability High efficiency Strong MOSFET reliability Robust operation Potential Applications Telecom DC-DC converter Datacom DC-DC converter Two switch forward converter Active clamp forward converter Class D audio amplifier Applications 3D ToF camera for in-cabin monitoring system Consumer electronics Data center and AI data center solutions Telecommunication infrastructure

EiceDRIVER™ - dual-channel junction-isolated gate driver - 2EDL8023G

The EiceDRIVER™ 2EDL8023G dual-channel junction-isolated gate driver IC is designed for medium-voltage power MOSFETs in half-bridge applications such as telecom and datacom DC-DC converters.

This industry-leading 3 A version is recommended to reduce MOSFET switching losses. The 2EDL8023G permits operation of both channels independently. For this reason, it is the perfect choice for diagonally driven full-bridges on the primary side as well as for the synchronous rectification stage on the secondary side because it permits reduction of losses during the free-wheeling phase.

All gate driver ICs of the EiceDRIVER™ 2EDL8 family come in an industry-standard leadless package and pin-out. All of them have an integrated 120 V boot-strap diode as well as a precise channel-to-channel propagation delay matching of +/- 2 ns.


Summary of Features

  • No need for external boot strap diode
  • Fast MOSFET switching
  • Strong pull-down current reduces risk of
  • return-on from switching noise
  • Low dead-time losses
  • Inherent shoot-through protection
  • -8 V/+15 V common mode rejection

Benefits

  • High power density
  • High efficiency
  • Strong MOSFET Reliability
  • High efficiency
  • Strong MOSFET reliability
  • Robust operation

Potential Applications

  • Telecom DC-DC converter
  • Datacom DC-DC converter
  • Two switch forward converter
  • Active clamp forward converter
  • Class D audio amplifier

Applications

  • 3D ToF camera for in-cabin monitoring system
  • Consumer electronics
  • Data center and AI data center solutions
  • Telecommunication infrastructure
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL8023G
Product Name Power - Gate Driver ICs - 2EDL8023G
Driver Type High-side; Low-side
Output Current 3 amps
Supply Voltage 8 to 20 volts
Propagation Delay 45 ns
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