Infineon Technologies AG Gate Driver ICs 2EDL05I06PF

Description
600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs Summary of Features Individual control circuits for both outputs Filtered detection of under voltage supply All inputs clamped by diodes Off line gate clamping function Asymmetric undervoltage lockout thresholds for high side and low side Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology Ultra fast bootstrap diode Benefits Space saving package Improved energy efficiency Evaluation Board EVAL-2EDL05I06PF available Potential Applications Home appliances Induction heating Motor control and drives Uninterruptible power supply (UPS) Solutions for solar energy systems Industrial welding 3D printers Power tools Applications 48 V intermediate bus converter (IBC) Home appliances Microwave ovens Refrigerators and freezers Designers who used this product also designed with IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 1 2 3
Request a Quote Datasheet
Description
600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs Summary of Features Individual control circuits for both outputs Filtered detection of under voltage supply All inputs clamped by diodes Off line gate clamping function Asymmetric undervoltage lockout thresholds for high side and low side Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology Ultra fast bootstrap diode Benefits Space saving package Improved energy efficiency Evaluation Board EVAL-2EDL05I06PF available Potential Applications Home appliances Induction heating Motor control and drives Uninterruptible power supply (UPS) Solutions for solar energy systems Industrial welding 3D printers Power tools Applications 48 V intermediate bus converter (IBC) Home appliances Microwave ovens Refrigerators and freezers Designers who used this product also designed with IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 1 2 3
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Suppliers

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Description
Supplier Links
Gate Driver ICs - 2EDL05I06PF - Infineon Technologies AG
Neubiberg, Germany
Gate Driver ICs
2EDL05I06PF
Gate Driver ICs 2EDL05I06PF
600 V half-bridge gate driver IC with integrated bootstrap diode EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs Summary of Features Individual control circuits for both outputs Filtered detection of under voltage supply All inputs clamped by diodes Off line gate clamping function Asymmetric undervoltage lockout thresholds for high side and low side Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology Ultra fast bootstrap diode Benefits Space saving package Improved energy efficiency Evaluation Board EVAL-2EDL05I06PF available Potential Applications Home appliances Induction heating Motor control and drives Uninterruptible power supply (UPS) Solutions for solar energy systems Industrial welding 3D printers Power tools Applications 48 V intermediate bus converter (IBC) Home appliances Microwave ovens Refrigerators and freezers Designers who used this product also designed with IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 BSD235N | Small signal/small power MOSFET IPT60R022S7 | 500V-950V CoolMOS™ N-Channel Power MOSFET IPD900P06NM | P-Channel Power MOSFET IKW30N60H3 | IGBT discretes IHW40N135R5 | IGBT discretes BSO301SP H | P-Channel Power MOSFET ICE3AR0680JZ | CoolSET™ Fixed Frequency 2N7002DW | Small signal/small power MOSFET IPZA60R016CM8 | 600 V CoolMOS™ 8 1 2 3

600 V half-bridge gate driver IC with integrated bootstrap diode

EiceDRIVER™ Compact - Optimized 600V half bridge gate driver IC with LS-SOI technology to control IGBTs


Summary of Features

  • Individual control circuits for both outputs
  • Filtered detection of under voltage supply
  • All inputs clamped by diodes
  • Off line gate clamping function
  • Asymmetric undervoltage lockout thresholds for high side and low side
  • Insensitivity of the bridge output to negative transient voltages up to -50V given by SOI-technology
  • Ultra fast bootstrap diode

Benefits

  • Space saving package
  • Improved energy efficiency
  • Evaluation Board EVAL-2EDL05I06PF available

Potential Applications

  • Home appliances
  • Induction heating
  • Motor control and drives
  • Uninterruptible power supply (UPS)
  • Solutions for solar energy systems
  • Industrial welding
  • 3D printers
  • Power tools

Applications

  • 48 V intermediate bus converter (IBC)
  • Home appliances
  • Microwave ovens
  • Refrigerators and freezers

Designers who used this product also designed with


  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD900P06NM |
    P-Channel Power MOSFET
  • IKW30N60H3 |
    IGBT discretes
  • IHW40N135R5 |
    IGBT discretes
  • BSO301SP H |
    P-Channel Power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • 2N7002DW |
    Small signal/small power MOSFET
  • IPZA60R016CM8 |
    600 V CoolMOS™ 8
  • BSD235N |
    Small signal/small power MOSFET
  • IPT60R022S7 |
    500V-950V CoolMOS™ N-Channel Power MOSFET
  • IPD900P06NM |
    P-Channel Power MOSFET
  • IKW30N60H3 |
    IGBT discretes
  • IHW40N135R5 |
    IGBT discretes
  • BSO301SP H |
    P-Channel Power MOSFET
  • ICE3AR0680JZ |
    CoolSET™ Fixed Frequency
  • 2N7002DW |
    Small signal/small power MOSFET
  • IPZA60R016CM8 |
    600 V CoolMOS™ 8

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Gate Drivers
Product Number 2EDL05I06PF
Product Name Gate Driver ICs
Driver Type Dual Gate Driver
Output Current 0.3600 amps
Supply Voltage 13 to 17.5 volts
Propagation Delay 400 ns
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