Hamamatsu Photonics Europe Si photodiodes S9055-01

Description
Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans-impedance amplifiers. Features - Flat response characteristics up to high frequency bands - High-speed response: 2 GHz (VR=2 V, -3 dB) - Low capacitance: 0.5 pF (VR=2 V) - Highly reliable package: 3-pin TO-18 package
Request a Quote
Description
Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans-impedance amplifiers. Features - Flat response characteristics up to high frequency bands - High-speed response: 2 GHz (VR=2 V, -3 dB) - Low capacitance: 0.5 pF (VR=2 V) - Highly reliable package: 3-pin TO-18 package
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The S9055-01 is a silicon PIN photodiode designed for high-speed optical communication and measurement systems, featuring a 2 GHz cutoff frequency at 2 V reverse bias and a terminal capacitance of 0.5 pF at the same bias. It is packaged in a 3-pin TO-18 case with a photosensitive area of 0.1 mm diameter, operates from -40 °C to +100 °C, and has a spectral response range of 320 to 1000 nm with peak sensitivity at 700 nm. Dark current is specified as 1 pA maximum at 2 V reverse voltage, and frequency flatness is within -0.5 dB up to 100 MHz.

Datasheet Summary
Powered by GS/AI

The S9055-01 is a silicon PIN photodiode designed for high-speed optical communication and measurement systems, featuring a 2 GHz cutoff frequency at 2 V reverse bias and a terminal capacitance of 0.5 pF at the same bias. It is packaged in a 3-pin TO-18 case with a photosensitive area of 0.1 mm diameter, operates from -40 °C to +100 °C, and has a spectral response range of 320 to 1000 nm with peak sensitivity at 700 nm. Dark current is specified as 1 pA maximum at 2 V reverse voltage, and frequency flatness is within -0.5 dB up to 100 MHz.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S9055-01 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S9055-01
Si photodiodes S9055-01
Flat response characteristics up to high frequency bands The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans-impedance amplifiers. Features - Flat response characteristics up to high frequency bands - High-speed response: 2 GHz (VR=2 V, -3 dB) - Low capacitance: 0.5 pF (VR=2 V) - Highly reliable package: 3-pin TO-18 package

Flat response characteristics up to high frequency bands

The S9055-01 Si PIN photodiodes deliver a high-speed response exceeding 1 GHz at low bias voltage (VR=2 V). The low capacitance (less than 1 pF) makes the S9055-01 ideal for combination with high-speed trans-impedance amplifiers.

Features
- Flat response characteristics up to high frequency bands
- High-speed response: 2 GHz (VR=2 V, -3 dB)
- Low capacitance: 0.5 pF (VR=2 V)
- Highly reliable package: 3-pin TO-18 package

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S9055-01
Product Name Si photodiodes
Photodiode Type PIN Photodiode
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
Peak Sensitivity Wavelength 700 nm (7000 Å)
Photodiode Material Silicon
Unlock Full Specs
to access all available technical data

Similar Products

InGaAs photodiodes - G12183-010K - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 2600 nm (9000 to 26000 Å)
Peak Sensitivity Wavelength 2300 nm (23000 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Si photodiodes - S13337-01 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Photodiode Spectral Response UV; IR
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
View Details
Si photodiodes - S9219-01 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Spectral Response Visible
Spectral Response Range 380 to 780 nm (3800 to 7800 Å)
Peak Sensitivity Wavelength 550 nm (5500 Å)
View Details
2 suppliers
Segmented Si photodiodes - S9345 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Spectral Response Range 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
View Details