Hamamatsu Photonics Europe Si photodiodes S8745-01

Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
Request a Quote
Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The S8745-01 is a silicon photodiode with integrated operational amplifier, feedback resistance of 1 GΩ, and feedback capacitance of 5 pF, packaged in a TO-5 case with a 2.4 × 2.4 mm photosensitive area. It operates from 190 to 1100 nm, with peak sensitivity at 960 nm and a noise equivalent power of 11 fW/Hz¹/² at peak wavelength and 10 Hz. The device has an output offset voltage of ±4 mV, a cutoff frequency of 32 Hz, and a 13 V output voltage swing. Supply current is ±0.3 mA, and it operates from -20 to +60 °C with ±20 V supply voltage. The photosensitive area is internally connected to GND for EMC noise immunity, and the package includes a shielding effect. Gain can be varied using an external feedback resistor.

Datasheet Summary
Powered by GS/AI

The S8745-01 is a silicon photodiode with integrated operational amplifier, feedback resistance of 1 GΩ, and feedback capacitance of 5 pF, packaged in a TO-5 case with a 2.4 × 2.4 mm photosensitive area. It operates from 190 to 1100 nm, with peak sensitivity at 960 nm and a noise equivalent power of 11 fW/Hz¹/² at peak wavelength and 10 Hz. The device has an output offset voltage of ±4 mV, a cutoff frequency of 32 Hz, and a 13 V output voltage swing. Supply current is ±0.3 mA, and it operates from -20 to +60 °C with ±20 V supply voltage. The photosensitive area is internally connected to GND for EMC noise immunity, and the package includes a shielding effect. Gain can be varied using an external feedback resistor.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S8745-01 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S8745-01
Si photodiodes S8745-01
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise

Photodiode and preamp integrated with feedback resistance and capacitance

This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.

Features
- Use low power consumption FET input operational amplifier
- Built-in Rf=1 GΩ and Cf=5 pF
- Variable gain with an externally connected resistor
- Low noise, low NEP
- Package with shielding effect
- Highly resistance to EMC noise

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S8745-01
Product Name Si photodiodes
Spectral Response Range 190 to 1100 nm (1900 to 11000 Å)
Unlock Full Specs
to access all available technical data

Similar Products

Photo IC for laser beam synchronous detection - S9703-11 - Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Number of Array Elements 1
View Details
InGaAs photodiodes - G12181-230K - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Spectral Response Range 900 to 1850 nm (9000 to 18500 Å)
Peak Sensitivity Wavelength 1750 nm (17500 Å)
Photodiode Material Indium Gallium Arsenide
View Details
Si photodiodes - S2386-18L - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Spectral Response Visible; IR
Spectral Response Range 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
View Details
Si APDs - S12086 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 400 to 1000 nm (4000 to 10000 Å)
View Details
2 suppliers