Hamamatsu Photonics Europe Si photodiodes S8745-01

Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
Request a Quote Datasheet
Description
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S8745-01 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S8745-01
Si photodiodes S8745-01
Photodiode and preamp integrated with feedback resistance and capacitance This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise. Features - Use low power consumption FET input operational amplifier - Built-in Rf=1 GΩ and Cf=5 pF - Variable gain with an externally connected resistor - Low noise, low NEP - Package with shielding effect - Highly resistance to EMC noise

Photodiode and preamp integrated with feedback resistance and capacitance

This is a low-noise sensor consisting of Si photodiode, op amp, feedback resistance and capacitance, all integrated into a small package. By simply connecting to a power supply, it can be used in low-light-level measurement such as analytical equipment and measurement equipment. The photosensitive area of the photodiode is internally connected to the GND terminal making it highly resistant to EMC noise.

Features
- Use low power consumption FET input operational amplifier
- Built-in Rf=1 GΩ and Cf=5 pF
- Variable gain with an externally connected resistor
- Low noise, low NEP
- Package with shielding effect
- Highly resistance to EMC noise

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S8745-01
Product Name Si photodiodes
Spectral Response Range 190 to 1100 nm (1900 to 11000 Å)
Unlock Full Specs
to access all available technical data

Similar Products

Si photodiodes - S3204-09 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Photodiode Spectral Response X-ray
Spectral Response Range 340 to 1100 nm (3400 to 11000 Å)
View Details
Photo IC for laser beam synchronous detection - S9684 - Hamamatsu Photonics Europe
Specs
Photodiode Type PIN Photodiode
Number of Array Elements 2
View Details
Si APDs - S15415-05 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1100 nm (4000 to 11000 Å)
Peak Sensitivity Wavelength 840 nm (8400 Å)
View Details
Si APDs - S8890-02 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Photodiode Type Avalanche Photodiode
Spectral Response Range 400 to 1100 nm (4000 to 11000 Å)
Peak Sensitivity Wavelength 940 nm (9400 Å)
View Details