Hamamatsu Photonics Europe Si photodiodes S8553

Description
Vacuum UV (VUV) monitoring photodiodes S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products. Features - Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm) - Large photosensitive area: 18 × 18 mm - Windowless package: 25.5 × 25.5 mm ceramic package
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Description
Vacuum UV (VUV) monitoring photodiodes S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products. Features - Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm) - Large photosensitive area: 18 × 18 mm - Windowless package: 25.5 × 25.5 mm ceramic package
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Datasheet
Datasheet Summary
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The S8553 is a vacuum UV monitoring silicon photodiode designed for excimer laser applications at 193 nm and 248 nm. It features a 18 × 18 mm photosensitive area in a windowless 25.5 × 25.5 mm ceramic package. The device operates with a reverse voltage up to 5 V, within a temperature range of -20 to +60 °C, and exhibits a spectral response from 190 to 1000 nm. At 193 nm, it has a typical photosensitivity of 60 mA/W and a dark current of 0.1 nA at 10 mV bias. Terminal capacitance is 8.0 nF at 0 V and 10 kHz, with a rise time of 18 µs. The photodiode shows improved stability under VUV exposure compared to previous models, with no external window to enhance vacuum UV transmission.

Datasheet Summary
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The S8553 is a vacuum UV monitoring silicon photodiode designed for excimer laser applications at 193 nm and 248 nm. It features a 18 × 18 mm photosensitive area in a windowless 25.5 × 25.5 mm ceramic package. The device operates with a reverse voltage up to 5 V, within a temperature range of -20 to +60 °C, and exhibits a spectral response from 190 to 1000 nm. At 193 nm, it has a typical photosensitivity of 60 mA/W and a dark current of 0.1 nA at 10 mV bias. Terminal capacitance is 8.0 nF at 0 V and 10 kHz, with a rise time of 18 µs. The photodiode shows improved stability under VUV exposure compared to previous models, with no external window to enhance vacuum UV transmission.

Suppliers

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Description
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Si photodiodes - S8553 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S8553
Si photodiodes S8553
Vacuum UV (VUV) monitoring photodiodes S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring. Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products. Features - Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm) - Large photosensitive area: 18 × 18 mm - Windowless package: 25.5 × 25.5 mm ceramic package

Vacuum UV (VUV) monitoring photodiodes

S8553 have sensitivity in the vacuum UV region. It is specially suitable for excimer laser (ArF: 193 nm, KrF: 248 nm) monitoring.
Its design optimized for use in the VUV region provides improved stability in sensitivity for VUV light irradiation compared to previous products.

Features
- Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm)
- Large photosensitive area: 18 × 18 mm
- Windowless package: 25.5 × 25.5 mm ceramic package

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S8553
Product Name Si photodiodes
Spectral Response Range 190 to 1000 nm (1900 to 10000 Å)
Photodiode Material Silicon
Active Area Diameter or Length 18 mm (0.7087 inch)
Active Area Height 18 mm (0.7087 inch)
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