Hamamatsu Photonics Europe Si photodiodes S6775-01

Description
Plastic SIP (single in-line package) The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area. Features - Visible-cut - High sensitivity - High-speed response - Large active area - Plastic package: 7 × 7.8 mm - Photosensitive area size: 5.5 × 4.8 mm
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Description
Plastic SIP (single in-line package) The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area. Features - Visible-cut - High sensitivity - High-speed response - Large active area - Plastic package: 7 × 7.8 mm - Photosensitive area size: 5.5 × 4.8 mm
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Datasheet
Datasheet Summary
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The S6775-01 is a silicon PIN photodiode in a plastic SIP package measuring 7 × 7.8 mm, optimized for near-infrared detection with a visible-cut filter. It has a photosensitive area of 5.5 × 4.8 mm, a peak spectral response at 960 nm, and a responsivity of 0.48 A/W at 830 nm under 10 V reverse bias. The device exhibits a typical dark current of 0.5 nA at 10 V and 25 °C, a terminal capacitance of 18 pF at 10 V and 1 MHz, and a cutoff frequency of 50 MHz. It operates from -25 °C to +85 °C and supports storage from -40 °C to +100 °C. The photosensitivity temperature coefficient is -0.5%/°C.

Datasheet Summary
Powered by GS/AI

The S6775-01 is a silicon PIN photodiode in a plastic SIP package measuring 7 × 7.8 mm, optimized for near-infrared detection with a visible-cut filter. It has a photosensitive area of 5.5 × 4.8 mm, a peak spectral response at 960 nm, and a responsivity of 0.48 A/W at 830 nm under 10 V reverse bias. The device exhibits a typical dark current of 0.5 nA at 10 V and 25 °C, a terminal capacitance of 18 pF at 10 V and 1 MHz, and a cutoff frequency of 50 MHz. It operates from -25 °C to +85 °C and supports storage from -40 °C to +100 °C. The photosensitivity temperature coefficient is -0.5%/°C.

Suppliers

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Product
Description
Supplier Links
Si photodiodes - S6775-01 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S6775-01
Si photodiodes S6775-01
Plastic SIP (single in-line package) The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area. Features - Visible-cut - High sensitivity - High-speed response - Large active area - Plastic package: 7 × 7.8 mm - Photosensitive area size: 5.5 × 4.8 mm

Plastic SIP (single in-line package)

The S6775-01 is a Si PIN photodiode with large photosensitive area, molded into a visible-cut plastic SIP for detecting near infrared range only. This Si PIN photodiode features high sensitivity, high-speed response and large photosensitive area.

Features
- Visible-cut - High sensitivity - High-speed response - Large active area
- Plastic package: 7 × 7.8 mm
- Photosensitive area size: 5.5 × 4.8 mm

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S6775-01
Product Name Si photodiodes
Photodiode Type PIN Photodiode
Photodiode Spectral Response Visible; IR
Spectral Response Range 700 to 1100 nm (7000 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
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