Hamamatsu Photonics Europe X-ray image sensors, Line sensors S3901-256FX

Description
Image sensor highly sensitive to X-rays from 10 k to 100 keV NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-256FX image sensor is variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-256FX was developed for detection of X-rays and electrons. The S3901-256FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O2S:Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-256FX active area consists of a photodiode array with pixels formed at 50 μm pitches and a height of 2.5 mm. Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-256FX. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
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Description
Image sensor highly sensitive to X-rays from 10 k to 100 keV NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-256FX image sensor is variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-256FX was developed for detection of X-rays and electrons. The S3901-256FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O2S:Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-256FX active area consists of a photodiode array with pixels formed at 50 μm pitches and a height of 2.5 mm. Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-256FX. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.
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Datasheet
Datasheet Summary
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The S3901-256FX is a 256-pixel NMOS linear image sensor designed for X-ray detection from 10 keV to 100 keV, featuring a phosphor-coated fiber optic plate with gadolinium oxysulfide (Gd₂O₂S:Tb) to convert X-rays to visible light at 550 nm. The pixel pitch is 50 µm and the active area height is 2.5 mm. It operates with a maximum power consumption of 1 mW at 5.0 V input, has a dark current of 0.2 pA typical, and supports a saturation charge of 50 pC. The sensor operates within a temperature range of -30 °C to +60 °C and uses CMOS-compatible start and clock pulses. The package length is 31.75 mm with 22 pins. Output linearity and spatial uniformity are assured, with a photo response non-uniformity of ±10%. The inactive pins and substrate must be grounded.

Datasheet Summary
Powered by GS/AI

The S3901-256FX is a 256-pixel NMOS linear image sensor designed for X-ray detection from 10 keV to 100 keV, featuring a phosphor-coated fiber optic plate with gadolinium oxysulfide (Gd₂O₂S:Tb) to convert X-rays to visible light at 550 nm. The pixel pitch is 50 µm and the active area height is 2.5 mm. It operates with a maximum power consumption of 1 mW at 5.0 V input, has a dark current of 0.2 pA typical, and supports a saturation charge of 50 pC. The sensor operates within a temperature range of -30 °C to +60 °C and uses CMOS-compatible start and clock pulses. The package length is 31.75 mm with 22 pins. Output linearity and spatial uniformity are assured, with a photo response non-uniformity of ±10%. The inactive pins and substrate must be grounded.

Suppliers

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X-ray image sensors, Line sensors - S3901-256FX - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
X-ray image sensors, Line sensors
S3901-256FX
X-ray image sensors, Line sensors S3901-256FX
Image sensor highly sensitive to X-rays from 10 k to 100 keV NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-256FX image sensor is variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-256FX was developed for detection of X-rays and electrons. The S3901-256FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O2S:Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-256FX active area consists of a photodiode array with pixels formed at 50 μm pitches and a height of 2.5 mm. Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-256FX. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.

Image sensor highly sensitive to X-rays from 10 k to 100 keV

NMOS linear image sensors are self-scanning photodiode arrays designed specifically as detectors for multichannel spectroscopy. The scanning circuit is made up of N-channel MOS transistors, has low power consumption and is easy to handle. Each photodiode has a large active area, high UV sensitivity yet very low noise, delivering a high S/N even at low light levels. Current output type NMOS linear image sensors also offer excellent output linearity and wide dynamic range. S3901-256FX image sensor is variants of S3901-F series NMOS image sensors. Having a phosphor-coated fiber optic plate (FOP) as the light input window, the S3901-256FX was developed for detection of X-rays and electrons. The S3901-256FX offers particularly high sensitivity to X-rays from 10 k to 100 keV. The phosphor material used is gadolinium ox sulfide (Gd2O2S:Tb) whose composition is carefully selected to provide optimum sensitivity and resolution with a peak emission at 550 nm wavelength. The S3901-256FX active area consists of a photodiode array with pixels formed at 50 μm pitches and a height of 2.5 mm. Hamamatsu S3904 series NMOS linear image sensors are also available with FOP windows coated with the same phosphor material as S3901-256FX. Using photodiodes with no phosphor and FOP window also allows direct detection of X-rays at energy levels below 10 keV.

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category CMOS Image Sensors
Product Number S3901-256FX
Product Name X-ray image sensors, Line sensors
Horizontal Pixels 256
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