The S3096-02 is a dual-element silicon PIN photodiode in a plastic package, designed for optical switching and position detection applications. It features a photosensitive area of 1.2 × 3 mm per element with a 30 μm gap between elements. The device operates with a maximum reverse voltage of 20 V and an operating temperature range of -25 to +85 °C. Each element has a peak sensitivity at 960 nm, a photosensitivity of 0.58 A/W at this wavelength, a dark current of up to 0.5 nA at 10 V reverse bias, and a terminal capacitance of 5 pF at 1 MHz. The cutoff frequency is 25 MHz at 780 nm and 50 Ω load. Noise equivalent power is 7.2 × 10⁻¹⁵ W/Hz¹/². The package dimensions are 8.4 × 5.2 × 4.1 mm, with silver-plated leads and standard stick packing of 50 pcs.
Dual-element, plastic package photodiode
The S3096-02 is a dual-element Si PIN photodiode molded into plastic package. Having high sensitivity and low noise, this photodiode has low crosstalk between the elements. Custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs. Please feel free to contact our sales office.
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S3096-02 |
| Product Name | Segmented Si photodiodes |
| Photodiode Type | PIN Photodiode |
| Spectral Response Range | 320 to 1100 nm (3200 to 11000 Å) |
| Peak Sensitivity Wavelength | 960 nm (9600 Å) |
| Photodiode Material | Silicon |
