Hamamatsu Photonics Europe Si photodiodes S2744-08

Description
Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution
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Description
Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution
Request a Quote
Datasheet
Datasheet Summary
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S2744-08 is a large active area Si PIN photodiode with an epoxy resin window and a 10 × 20 mm active area, designed for scintillation detectors and high-speed applications. It has a peak spectral response at 960 nm, a photo sensitivity of 0.36 A/W at λ=540 nm, a terminal capacitance of 4.7 pF at VR=70 V and f=1 MHz, and a dark current of 180 nA at VR=70 V and Ta=25 °C. It operates within a temperature range of -20 to +60 °C and stores from -20 to +80 °C with a maximum reverse voltage of 100 V and power dissipation of 100 mW. The device exhibits a dark current temperature coefficient of +1.12 %/°C and a cutoff frequency of 4.7 MHz. Its spectral response matches BGO and CsI(TI) scintillators, supports high quantum efficiency at 540 nm (85 %), and maintains high stability and good energy resolution.

Datasheet Summary
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S2744-08 is a large active area Si PIN photodiode with an epoxy resin window and a 10 × 20 mm active area, designed for scintillation detectors and high-speed applications. It has a peak spectral response at 960 nm, a photo sensitivity of 0.36 A/W at λ=540 nm, a terminal capacitance of 4.7 pF at VR=70 V and f=1 MHz, and a dark current of 180 nA at VR=70 V and Ta=25 °C. It operates within a temperature range of -20 to +60 °C and stores from -20 to +80 °C with a maximum reverse voltage of 100 V and power dissipation of 100 mW. The device exhibits a dark current temperature coefficient of +1.12 %/°C and a cutoff frequency of 4.7 MHz. Its spectral response matches BGO and CsI(TI) scintillators, supports high quantum efficiency at 540 nm (85 %), and maintains high stability and good energy resolution.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S2744-08 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S2744-08
Si photodiodes S2744-08
Large active area Si PIN photodiodes Features - Sensitivity matching with BGO and CsI(TI) scintillators - Low capacitance - High-speed response - High stability - Good energy resolution

Large active area Si PIN photodiodes

Features
- Sensitivity matching with BGO and CsI(TI) scintillators
- Low capacitance
- High-speed response
- High stability
- Good energy resolution

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S2744-08
Product Name Si photodiodes
Photodiode Type PIN Photodiode
Photodiode Spectral Response X-ray
Spectral Response Range 340 to 1100 nm (3400 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
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