Hamamatsu Photonics Europe Si photodiodes S1787-08

Description
Plastic package photodiode with low dark current The S1787-08 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features - For visible to IR range
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Description
Plastic package photodiode with low dark current The S1787-08 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features - For visible to IR range
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Datasheet
Datasheet Summary
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The S1787-08 is a plastic package silicon photodiode designed for visible to near-infrared range applications, featuring a light-impervious package that prevents stray light from reaching the active area. It has an effective active area of 6.6 mm², a spectral response peak at 960 nm, and operates with a maximum reverse voltage of 10 V. The device exhibits a dark current of 5.6 pA at VR=0 V and a shunt resistance of at least 10 GΩ at VR=1 V. Rise time is 1 µs at a load resistance of 1 kΩ. Operating temperature ranges from -10 °C to +60 °C, with a storage temperature range of -20 °C to +70 °C. The package dimensions are 8.0 mm by 4.5 mm with a 2.8 mm by 2.4 mm photosensitive area.

Datasheet Summary
Powered by GS/AI

The S1787-08 is a plastic package silicon photodiode designed for visible to near-infrared range applications, featuring a light-impervious package that prevents stray light from reaching the active area. It has an effective active area of 6.6 mm², a spectral response peak at 960 nm, and operates with a maximum reverse voltage of 10 V. The device exhibits a dark current of 5.6 pA at VR=0 V and a shunt resistance of at least 10 GΩ at VR=1 V. Rise time is 1 µs at a load resistance of 1 kΩ. Operating temperature ranges from -10 °C to +60 °C, with a storage temperature range of -20 °C to +70 °C. The package dimensions are 8.0 mm by 4.5 mm with a 2.8 mm by 2.4 mm photosensitive area.

Suppliers

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Product
Description
Supplier Links
Si photodiodes - S1787-08 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S1787-08
Si photodiodes S1787-08
Plastic package photodiode with low dark current The S1787-08 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels. Features - For visible to IR range

Plastic package photodiode with low dark current

The S1787-08 is a plastic package photodiode that offers low dark current. Plastic package used is light-impervious, so no stray light can reach the photosensitive area from the side or backside. This allows reliable optical measurements in the visible to near infrared range, over a wide dynamic range from low light levels to high light levels.

Features
- For visible to IR range

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S1787-08
Product Name Si photodiodes
Photodiode Spectral Response Visible; IR
Spectral Response Range 320 to 1100 nm (3200 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
Active Area Diameter or Length 2.4 mm (0.0945 inch)
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