Hamamatsu Photonics Europe Si photodiodes S16008-1010

Description
Si photodiode for visible to near infrared region The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features - High sensitivity in visible to near infrared region - Low dark current - Superior linearity - Compatible with lead-free solder reflow
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Description
Si photodiode for visible to near infrared region The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features - High sensitivity in visible to near infrared region - Low dark current - Superior linearity - Compatible with lead-free solder reflow
Request a Quote Datasheet

Suppliers

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Supplier Links
Si photodiodes - S16008-1010 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S16008-1010
Si photodiodes S16008-1010
Si photodiode for visible to near infrared region The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series. Features - High sensitivity in visible to near infrared region - Low dark current - Superior linearity - Compatible with lead-free solder reflow

Si photodiode for visible to near infrared region

The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series.

Features
- High sensitivity in visible to near infrared region
- Low dark current
- Superior linearity
- Compatible with lead-free solder reflow

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S16008-1010
Product Name Si photodiodes
Photodiode Spectral Response Visible; IR
Spectral Response Range 380 to 1100 nm (3800 to 11000 Å)
Peak Sensitivity Wavelength 960 nm (9600 Å)
Photodiode Material Silicon
Active Area Diameter or Length 10 mm (0.3937 inch)
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