The S16008-1010 is a surface mount silicon photodiode designed for visible to near-infrared detection, with a photosensitive area of 10 × 10 mm. It has a peak spectral response at 960 nm, a typical photosensitivity of 0.5 mA/W at 960 nm and 10 mV reverse bias, a maximum dark current of 200 pA at 10 mV reverse bias, and a terminal capacitance of 29 nF at 0 V reverse bias. The device operates from -40 °C to +100 °C, meets JEDEC J-STD-020 MSL 4 moisture sensitivity level, and is compatible with lead-free reflow soldering up to 260 °C for 30 seconds.
Si photodiode for visible to near infrared region
The S16008 series is a surface mount type Si photodiode with high sensitivity in the visible to near infrared region. This provides higher sensitivity than the previous S2387 series.
Features
- High sensitivity in visible to near infrared region
- Low dark current
- Superior linearity
- Compatible with lead-free solder reflow
| Hamamatsu Photonics Europe | |
|---|---|
| Product Category | Photodiodes |
| Product Number | S16008-1010 |
| Product Name | Si photodiodes |
| Photodiode Spectral Response | Visible; IR |
| Spectral Response Range | 380 to 1100 nm (3800 to 11000 Å) |
| Peak Sensitivity Wavelength | 960 nm (9600 Å) |
| Photodiode Material | Silicon |
| Active Area Diameter or Length | 10 mm (0.3937 inch) |
