Hamamatsu Photonics Europe Si photodiodes S1226-44BK

Description
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability
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Description
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability
Request a Quote
Datasheet
Datasheet Summary
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The S1226-44BK is a silicon photodiode with a 3.6 × 3.6 mm photosensitive area, packaged in a TO-5 case, designed for UV to visible light detection with suppressed near-infrared sensitivity. It operates within a reverse voltage range of -40 to +100 °C and a storage temperature range of -55 to +125 °C. The device uses borosilicate glass as the window material and exhibits a spectral response range of 320 to 1000 nm, with a peak responsivity at 720 nm. It has a typical short-circuit current of 10 µA at VR=10 mV, a shunt resistance of 1 GΩ at VR=10 mV, and a terminal capacitance of 10 pF at VR=0 V. The dark current is specified at 20 pA maximum. The photodiode has a spectral responsivity of 0.10 to 0.12 A/W from 190 to 1000 nm and a temperature coefficient of dark current of 1.0 %/°C.

Datasheet Summary
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The S1226-44BK is a silicon photodiode with a 3.6 × 3.6 mm photosensitive area, packaged in a TO-5 case, designed for UV to visible light detection with suppressed near-infrared sensitivity. It operates within a reverse voltage range of -40 to +100 °C and a storage temperature range of -55 to +125 °C. The device uses borosilicate glass as the window material and exhibits a spectral response range of 320 to 1000 nm, with a peak responsivity at 720 nm. It has a typical short-circuit current of 10 µA at VR=10 mV, a shunt resistance of 1 GΩ at VR=10 mV, and a terminal capacitance of 10 pF at VR=0 V. The dark current is specified at 20 pA maximum. The photodiode has a spectral responsivity of 0.10 to 0.12 A/W from 190 to 1000 nm and a temperature coefficient of dark current of 1.0 %/°C.

Suppliers

Company
Product
Description
Supplier Links
Si photodiodes - S1226-44BK - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si photodiodes
S1226-44BK
Si photodiodes S1226-44BK
For UV to visible, precision photometry; suppressed near IR sensitivity Features - High UV sensitivity: QE=75 % (λ=200 nm) - Suppressed near IR sensitivity - Low dark current - High reliability

For UV to visible, precision photometry; suppressed near IR sensitivity

Features
- High UV sensitivity: QE=75 % (λ=200 nm)
- Suppressed near IR sensitivity
- Low dark current
- High reliability

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S1226-44BK
Product Name Si photodiodes
Photodiode Spectral Response UV; Visible
Spectral Response Range 320 to 1000 nm (3200 to 10000 Å)
Peak Sensitivity Wavelength 720 nm (7200 Å)
Photodiode Material Silicon
Active Area Diameter or Length 3.6 mm (0.1417 inch)
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