Hamamatsu Photonics Europe Si APDs S12092-05

Description
High sensitivity in near infrared range (λ=900 nm) This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).
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Description
High sensitivity in near infrared range (λ=900 nm) This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).
Request a Quote
Datasheet
Datasheet Summary
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The S12092-05 is a silicon avalanche photodiode designed for high sensitivity in the near-infrared range at 900 nm, suitable for optical rangefinders and free space optics. It is packaged in a TO-18 case with a photosensitive window area of φ0.5 mm. The device operates at temperatures from -20 °C to +85 °C and is rated for a maximum forward current of 10 mA and reverse current of 200 µA. It has a typical breakdown voltage of 250 V at 25 °C, a spectral response peak at 860 nm, and a quantum efficiency of 72% at 900 nm. Terminal capacitance is 0.7 pF at M=1, and gain is specified at 100. The package uses borosilicate glass for the window.

Datasheet Summary
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The S12092-05 is a silicon avalanche photodiode designed for high sensitivity in the near-infrared range at 900 nm, suitable for optical rangefinders and free space optics. It is packaged in a TO-18 case with a photosensitive window area of φ0.5 mm. The device operates at temperatures from -20 °C to +85 °C and is rated for a maximum forward current of 10 mA and reverse current of 200 µA. It has a typical breakdown voltage of 250 V at 25 °C, a spectral response peak at 860 nm, and a quantum efficiency of 72% at 900 nm. Terminal capacitance is 0.7 pF at M=1, and gain is specified at 100. The package uses borosilicate glass for the window.

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Si APDs - S12092-05 - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Si APDs
S12092-05
Si APDs S12092-05
High sensitivity in near infrared range (λ=900 nm) This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).

High sensitivity in near infrared range (λ=900 nm)

This is a Si APD that offer enhanced 900 nm band near-infrared sensitivity. This is a suitable for applications such as optical rangefinders and FSO (free space optics).

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number S12092-05
Product Name Si APDs
Photodiode Type Avalanche Photodiode
Photodiode Spectral Response IR
Spectral Response Range 440 to 1100 nm (4400 to 11000 Å)
Peak Sensitivity Wavelength 860 nm (8600 Å)
Photodiode Material Silicon
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