Hamamatsu Photonics Europe Linear InGaAs photodiode arrays G8909-01

G8909-01 is a 40-element InGaAs PIN photodiode array with 250 μm pitch for DWDM monitoring, featuring a photosensitive area of φ0.08 mm per element. It operates from -40 to +85 °C in N2 or vacuum, with a maximum reverse voltage of 6 V and incident light level of 10 mW. Spectral response ranges from 0.9 to 1.7 µm, with photosensitivity of 0.8 to 0.95 A/W at 1.31 and 1.55 µm. Dark current is up to 0.2 nA at 5 V reverse bias, shunt resistance exceeds 8 GΩ, terminal capacitance is 1.4 pF at 1 MHz, and crosstalk is less than -33 dB. The device is sensitive to electrostatic discharge and measures 22.0 mm in length with 150 × 150 µm anode and cathode bond pads at 400 µm pitch.