Hamamatsu Photonics Europe Linear InGaAs photodiode arrays G12430-046D

Description
46-element InGaAs array
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Description
46-element InGaAs array
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Datasheet
Datasheet Summary
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The G12430-046D is a 46-element one-dimensional InGaAs PIN photodiode array in a 48-pin ceramic DIP package, designed for near-infrared spectroscopic analysis. Each element has a photosensitive area of 0.2 mm × 1 mm with a pitch of 0.25 mm. The device operates from -20 to +70 °C and withstands a maximum reverse voltage of 5 V. It exhibits peak sensitivity at 1.55 µm with a photosensitivity of 0.95 A/W(typical), a dark current of 250 pA (typical) at VR=1 V, and a cutoff frequency of 60 MHz (typical). Terminal capacitance is 35 pF (typical) at 1 MHz. The window is made of borosilicate glass with resin sealing and no AR coating. Pinout supports individual channel readout via operational amplifiers.

Datasheet Summary
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The G12430-046D is a 46-element one-dimensional InGaAs PIN photodiode array in a 48-pin ceramic DIP package, designed for near-infrared spectroscopic analysis. Each element has a photosensitive area of 0.2 mm × 1 mm with a pitch of 0.25 mm. The device operates from -20 to +70 °C and withstands a maximum reverse voltage of 5 V. It exhibits peak sensitivity at 1.55 µm with a photosensitivity of 0.95 A/W(typical), a dark current of 250 pA (typical) at VR=1 V, and a cutoff frequency of 60 MHz (typical). Terminal capacitance is 35 pF (typical) at 1 MHz. The window is made of borosilicate glass with resin sealing and no AR coating. Pinout supports individual channel readout via operational amplifiers.

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Linear InGaAs photodiode arrays - G12430-046D - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
Linear InGaAs photodiode arrays
G12430-046D
Linear InGaAs photodiode arrays G12430-046D
46-element InGaAs array

46-element InGaAs array

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category Photodiodes
Product Number G12430-046D
Product Name Linear InGaAs photodiode arrays
Spectral Response Range 900 to 1700 nm (9000 to 17000 Å)
Peak Sensitivity Wavelength 1550 nm (15500 Å)
Photodiode Material Indium Gallium Arsenide
Array Array
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