Hamamatsu Photonics Europe InGaAs image sensors, Line sensors G11620-256DA

Description
Near infrared image sensor (0.95 to 1.7 μm) Single video line: 256 pixels The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. ■Features - Low noise, low dark current - Two selectable conversion efficiencies - Anti-saturation circuit - CDS circuit - Built-in thermistor - Simple operation (by built-in timing generator)
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Description
Near infrared image sensor (0.95 to 1.7 μm) Single video line: 256 pixels The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. ■Features - Low noise, low dark current - Two selectable conversion efficiencies - Anti-saturation circuit - CDS circuit - Built-in thermistor - Simple operation (by built-in timing generator)
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Datasheet
Datasheet Summary
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The G11620-256DA is a non-cooled InGaAs linear image sensor with 256 effective pixels, a 50 μm pixel pitch, and a photosensitive area of 12.8 × 0.5 mm. It features a built-in CDS circuit, two selectable conversion efficiencies via external voltage control, an anti-saturation circuit, and a thermistor for temperature monitoring. Operation is simplified by an integrated timing generator that requires only CLK and RESET pulses. The sensor is packaged in a 22-pin ceramic housing with a borosilicate glass window featuring an anti-reflective coating. Operating voltage ranges are 4.7 to 5.3 V for Vdd and 3.9 to 4.1 V for Vinp, INP, and PDN, with a maximum operating temperature of 60 °C and a storage temperature range of -20 to 70 °C.

Datasheet Summary
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The G11620-256DA is a non-cooled InGaAs linear image sensor with 256 effective pixels, a 50 μm pixel pitch, and a photosensitive area of 12.8 × 0.5 mm. It features a built-in CDS circuit, two selectable conversion efficiencies via external voltage control, an anti-saturation circuit, and a thermistor for temperature monitoring. Operation is simplified by an integrated timing generator that requires only CLK and RESET pulses. The sensor is packaged in a 22-pin ceramic housing with a borosilicate glass window featuring an anti-reflective coating. Operating voltage ranges are 4.7 to 5.3 V for Vdd and 3.9 to 4.1 V for Vinp, INP, and PDN, with a maximum operating temperature of 60 °C and a storage temperature range of -20 to 70 °C.

Suppliers

Company
Product
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Supplier Links
InGaAs image sensors, Line sensors - G11620-256DA - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs image sensors, Line sensors
G11620-256DA
InGaAs image sensors, Line sensors G11620-256DA
Near infrared image sensor (0.95 to 1.7 μm) Single video line: 256 pixels The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application. ■Features - Low noise, low dark current - Two selectable conversion efficiencies - Anti-saturation circuit - CDS circuit - Built-in thermistor - Simple operation (by built-in timing generator)

Near infrared image sensor (0.95 to 1.7 μm)
Single video line: 256 pixels

The G11620 series is an InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry. The CMOS chip includes a charge amplifier, a shift register, and a timing generator circuit. Unlike conventional InGaAs linear image sensors that incorporate two CMOS signal processing chips, the G11620 series uses only one CMOS chip by bump-connecting it to the InGaAs photodiode array. This structure reduces a difference in the video output that usually occurs between odd-number pixels and even-number pixels.
The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array.
Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation in the wide spectral range.
The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

■Features
- Low noise, low dark current
- Two selectable conversion efficiencies
- Anti-saturation circuit
- CDS circuit
- Built-in thermistor
- Simple operation (by built-in timing generator)

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category CMOS Image Sensors
Product Number G11620-256DA
Product Name InGaAs image sensors, Line sensors
Horizontal Pixels 256
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