Hamamatsu Photonics Europe InGaAs image sensors, Line sensors G11608-256DA

Description
Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm) The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.
Request a Quote
Description
Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm) The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The G11608-256DA is a 256-element InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry, with a spectral response range of 0.5 to 1.7 μm and a 50 μm pixel pitch. It is packaged in a 22-pin ceramic housing measuring 31.8 mm in length and 23.0 mm in width, featuring a borosilicate glass window with no anti-reflective coating. The device includes a built-in thermistor, CDS circuit, and an internal timing generator for simplified operation. Operating at a supply voltage of 5 V, it offers two selectable conversion efficiencies via external voltage control and has a maximum operating temperature of 60 °C. The photoresponse nonuniformity is ±5% max, with a saturation voltage of 2.8 V. Readout noise is 200 to 400 μVrms at 16 nV/e- conversion efficiency.

Datasheet Summary
Powered by GS/AI

The G11608-256DA is a 256-element InGaAs linear image sensor designed for near-infrared multichannel spectrophotometry, with a spectral response range of 0.5 to 1.7 μm and a 50 μm pixel pitch. It is packaged in a 22-pin ceramic housing measuring 31.8 mm in length and 23.0 mm in width, featuring a borosilicate glass window with no anti-reflective coating. The device includes a built-in thermistor, CDS circuit, and an internal timing generator for simplified operation. Operating at a supply voltage of 5 V, it offers two selectable conversion efficiencies via external voltage control and has a maximum operating temperature of 60 °C. The photoresponse nonuniformity is ±5% max, with a saturation voltage of 2.8 V. Readout noise is 200 to 400 μVrms at 16 nV/e- conversion efficiency.

Suppliers

Company
Product
Description
Supplier Links
InGaAs image sensors, Line sensors - G11608-256DA - Hamamatsu Photonics Europe
Herrsching am Ammersee, Germany
InGaAs image sensors, Line sensors
G11608-256DA
InGaAs image sensors, Line sensors G11608-256DA
Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm) The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

Wide spectral response range, near infrared image sensors (0.5 to 1.7 μm)

The G11608 series InGaAs linear image sensors are specifically designed for near infrared multichannel spectrophotometry. The G11608 series consists of an InGaAs photodiode array with enhanced sensitivity at shorter wavelengths, and CMOS chip that contains a charge amplifier array, a shift register, and a timing generator. The charge amplifier array is made up of CMOS transistors connected to each pixel of the InGaAs photodiode array. Signals from each pixel are read out in charge integration mode to achieve high sensitivity and stable operation. The signal processing circuit on the CMOS chip offers two levels of conversion efficiency (CE) that can be selected by the external voltage to meet the application.

Supplier's Site Datasheet

Technical Specifications

  Hamamatsu Photonics Europe
Product Category CMOS Image Sensors
Product Number G11608-256DA
Product Name InGaAs image sensors, Line sensors
Horizontal Pixels 256
Unlock Full Specs
to access all available technical data

Similar Products

Line sensors, For spectrophotometry - S15796-2048-20 - Hamamatsu Photonics Europe
Specs
Horizontal Pixels 2048
Pixel Size 200 µm (7.87 mils)
View Details
Line sensors, For spectrophotometry - S13496-20 - Hamamatsu Photonics Europe
Specs
Horizontal Pixels 4096
Pixel Size 200 µm (7.87 mils)
View Details
Mini-spectrometers - C13555MA - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Horizontal Pixels 512
View Details
Line sensors, For industry - S10077 - Hamamatsu Photonics Europe
Hamamatsu Photonics Europe
Specs
Horizontal Pixels 1024
Pixel Size 50 µm (1.97 mils)
View Details