- Trained on our vast library of engineering resources.

Fuji Electric Corp. of America Power MOSFETs SuperFAP-E3S Model: FML16N50ES

Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junctio n” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Fuji Electric offers a high performance and easy-to-use, easy-to-design planar type Power MOSFET achieved by the 2nd generation “Quasi-Plane-Junction” technology. It maintains both low power loss and noise, lower RDS(on) characteristics, more controllable switching dv/dt by gate resistance, smaller VGS ringing waveform during switching, narrow band of the gate threshold voltage, and high avalanche durability.

Supplier's Site Datasheet

Technical Specifications

  Fuji Electric Corp. of America
Product Category Power MOSFET
Product Number SuperFAP-E3S Model: FML16N50ES
Product Name Power MOSFETs
V(BR)DSS 500 volts
rDS(on) 0.3800 ohms
IDSS 16000 milliamps
QG 52 nC
Unlock Full Specs
to access all available technical data

Similar Products

Discrete IGBT Modules - W series (High speed) Model: FGW30N65W - Fuji Electric Corp. of America
Specs
VCES 650 volts
IC(max) 30 amps
Switching Speed 20 kHz
View Details
Power MOSFETs - Super J  MOS S2 Model: FMP60N125S2HF - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.1250 ohms
IDSS 30100 milliamps
View Details
Power MOSFETs - SuperFAP-E3S Model: FMH13N60ES - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.5800 ohms
IDSS 13000 milliamps
View Details
Power MOSFETs - Super J  MOS S2 Model: FMW60N070S2HF - Fuji Electric Corp. of America
Specs
V(BR)DSS 600 volts
rDS(on) 0.0700 ohms
IDSS 53200 milliamps
View Details