The 2N5019 is a P-channel JFET designed for choppers, commutators, and analog switches, with a 30V gate-to-source breakdown voltage and a typical drain-to-source saturation current of -5 mA. It is available in TO-18, TO-92, and SOT23 packages, with the TO-18 variant hermetically sealed and suitable for military applications. The device has a typical on-resistance of 150 Ω at 0V gate bias and an input capacitance of 45 pF. It operates over a junction temperature range of -55°C to 125°C and meets UL 94 V-0 flammability standards for plastic packages. RoHS compliant.
JFETs JFET P-Channel 30V Low Noise Product overview: 2N5019 from InterFET is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 30V. Search-friendly keywords include transistor, BJT, switching, amplification, P-Channel, 30V, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-2N5019 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 288-2N5019 |
| Product Name | P-Channel 30V Bipolar Transistor |
| Package Type | Bulk |
