The MRF553 is an NPN silicon RF transistor for low-power amplifier applications. It is packaged in a case that measures 4.45 to 5.21 mm in length, 1.91 to 2.54 mm in width, and 8.84 to 9.73 mm in height. The transistor has a collector-emitter voltage rating of 36 V, a power dissipation of 3.0 W at 75 °C, and a junction temperature range of -65 °C to +200 °C. It provides a typical power gain of 11.5 dB at 175 MHz with 1.5 W output and a typical efficiency of 60%. The thermal resistance from junction to case is 41.7 °C/W.
RF Bipolar Transistors RF Transistor Product overview: MRF553 from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF553 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF553 |
| Product Name | Bipolar Transistor |
| Polarity | NPN |
| Package Type | Tray |
| Packing Method | Tray |
