The MRF448 is an NPN silicon RF power transistor for high linearity Class AB HF power amplifiers up to 30 MHz. It is packaged in a .500 4L flg style measuring 0.980 to 1.050 inches in length and 0.495 to 0.505 inches in width. The device has a collector-emitter voltage rating of 50 V, collector-base voltage of 100 V, and emitter-base voltage of 4.0 V. It dissipates 290 W at 25 °C with a junction temperature range of -65 °C to +200 °C. It delivers 14 dB power gain at 220 W and achieves -32 dBc third-order intermodulation distortion at 220 W (PEP). Collector-emitter saturation current is 5 mA at 30 V, and output capacitance is 350 to 450 pF at 50 V and 1.0 MHz. Thermal resistance from junction to case is 0.6 °C/W.
RF Bipolar Transistors RF Transistor Product overview: MRF448 from Advanced Semiconductor, Inc. is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-MRF448 can be used for catalog matching and distributor lookup.
| ERSAELECTRONICS PTE. LTD. | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | 2087-MRF448 |
| Product Name | Bipolar Transistor |
| Package Type | Tray |
