Richardson RFPD RF Power Transistor VRF150

The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. It is packaged in a 0.5-inch SOE package measuring 25.14 mm length, 12.95 mm width, and 6.98 mm height. The device has a drain-source voltage rating of 170 V, a continuous drain current of 16 A at 25°C, and a total power dissipation of 300 W. It offers 18 dB typical gain at 30 MHz and 11 dB at 150 MHz with 150 W output power at 50 V. Thermal resistance from junction to case is 0.60 °C/W. The transistor is RoHS compliant, nitride passivated, and rated for a maximum junction temperature of 200°C. It features 30:1 load VSWR capability and meets AEC-Q200 qualification standards.