Richardson RFPD RF PIN Diode MA4P7452F-1072T

Description
Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes MACOM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7452F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 100 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.
Request a Quote Datasheet
Description
Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes MACOM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7452F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 100 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - MA4P7452F-1072T - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA4P7452F-1072T
RF PIN Diode MA4P7452F-1072T
Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes MACOM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7452F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 100 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.

Single Diode Configuration: The MA4P7452F-1072T is a surface mountable PIN diode in a Non-Magnetic (patent pending) Metal Electrode Leadless Faced (MELF) package. The device incorporates MACOM's proven HIPAX technology to produce a low inductance ceramic package with no ribbons or whisker wires. The package utilizes MACOM's new nonmagnetic plating process to provide an extremely low permeability, hermetically sealed package. Incorporated in the package is a passivated PIN diode that is full face bonded on both the cathode and anode of the chip to maximize surface area for lower electrical and thermal resistance. The MA4P7452F-1072T has been comprehensively characterized both electrically and mechanically to ensure repeatable and predictable performance. The diodes are well suited for use in low loss, low distortion, and high power switching circuits applicable for high magnetic field environments from HF through UHF frequencies. The lower thermal resistance of this device provides excellent higher average performance at RF power incident levels up to 100 watts CW. This device is designed to meet the most rigorous electrical and mechanical requirements of MRI testing environments.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Diodes
Product Number MA4P7452F-1072T
Product Name RF PIN Diode
Configuration Single
Diode Type PIN
Package MELF-1072
Unlock Full Specs
to access all available technical data

Similar Products

RF Varactor Tuning Diode - MA46H120 - Richardson RFPD
Specs
Configuration Single
Diode Type Varactor
Package ODS-1203
View Details
RF Schottky Diode - CDC7630-000 - Richardson RFPD
Specs
Configuration Single
Diode Type Schottky
Operating Frequency 40000 MHz
View Details
RF PIN Diode - MA47406-132 - Richardson RFPD
Specs
Diode Type PIN
View Details
RF Schottky Diode - MA4E2054D-287 - Richardson RFPD
Specs
Diode Type Schottky
RoHS Compliant RoHS
Package SOT23
View Details