Richardson RFPD RF Power Transistor D2221UK

The D2221UK is a silicon RF DMOS FET in an SO8 package, measuring 4.06 mm × 5.08 mm × 1.27 mm, designed for high-gain, broadband RF amplification in HF/VHF/UHF communications from 1 MHz to 2 GHz. It provides a minimum gain of 10 dB at 7.5 W output power and 1 GHz, with a drain efficiency of 40% at 12.5 V and 0.3 A quiescent current. The device supports a drain-source breakdown voltage of 40 V, gate-source breakdown voltage of ±20 V, and continuous drain current of 6 A. Power dissipation is rated at 17.5 W, with a maximum junction temperature of 200°C and thermal resistance of 6°C/W. Input, output, and reverse transfer capacitances are 36 pF, 30 pF, and 3 pF respectively at 1 MHz. It is RoHS compliant and features low noise, simplified biasing, and a 20:1 VSWR load mismatch tolerance.