Richardson RFPD RF & MW LNA CHA3024-99F/00

Description
2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15um gate length pHEMT process, with via holes thorugh the substrate, air bridges and optical gate lithography. The part is supplied as bare die and input and output RF accesses are matched to 50 ohms.
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Description
2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15um gate length pHEMT process, with via holes thorugh the substrate, air bridges and optical gate lithography. The part is supplied as bare die and input and output RF accesses are matched to 50 ohms.
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Suppliers

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RF & MW LNA - CHA3024-99F/00 - Richardson RFPD
Downers Grove, IL, United States
RF & MW LNA
CHA3024-99F/00
RF & MW LNA CHA3024-99F/00
2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation. The circuit is manufactured using a 0.15um gate length pHEMT process, with via holes thorugh the substrate, air bridges and optical gate lithography. The part is supplied as bare die and input and output RF accesses are matched to 50 ohms.

2-22 GHz LNA with AGC. The CHA3024-99F is a distributed Low Noise Amplifier with Adjustable Gain Control (AGC) which operates between 2 and 22 GHz. It is designed for a wide range of applications, such as electronic warfare, X and Ku Point to Point Radio, and test instrumentation.

The circuit is manufactured using a 0.15um gate length pHEMT process, with via holes thorugh the substrate, air bridges and optical gate lithography. The part is supplied as bare die and input and output RF accesses are matched to 50 ohms.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number CHA3024-99F/00
Product Name RF & MW LNA
Amplifier Type Low Noise Amplifier
Frequency Range 2000 to 22000 MHz
Maximum Gain 15 dB
Output Power 18 dBm
Noise Figure 3 dB
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