Richardson RFPD RF & MW Power Amplifier A2I20H060NR1

Description
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
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Description
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.
Request a Quote Datasheet

Suppliers

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RF & MW Power Amplifier - A2I20H060NR1 - Richardson RFPD
Downers Grove, IL, United States
RF & MW Power Amplifier
A2I20H060NR1
RF & MW Power Amplifier A2I20H060NR1
The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

The A2I20H060N wideband integrated circuit is an asymmetrical Doherty designed with on-chip matching that makes it usable from 1800 to 2200 MHz. This multi-stage structure is rated for 26 to 32 V operation and covers all typical cellular base station modulation formats.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category RF Amplifiers
Product Number A2I20H060NR1
Product Name RF & MW Power Amplifier
Amplifier Type Power Amplifier
Frequency Range 1800 to 2200 MHz
Maximum Gain 28.9 dB
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