Advantech Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C AQD-D4U16R32-SEW

Description
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C Registered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
  • Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C - AQD-D4U16R32-SEW - Advantech
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Description
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C Registered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C
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Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C - AQD-D4U16R32-SEW - Advantech
Advantech
Cincinnati, OH, United States
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
AQD-D4U16R32-SEW
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C AQD-D4U16R32-SEW
Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C Registered DIMM 30u" Gold Plating Thickness Anti-sulfurization resistance 1.2V power consumption Samsung original chip wide temperatures from -40° to 85°C

Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C

  • Registered DIMM
  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • 1.2V power consumption
  • Samsung original chip
  • wide temperatures from -40° to 85°C
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Technical Specifications

  Advantech
Product Category Memory Modules
Product Number AQD-D4U16R32-SEW
Product Name Advantech 16G R-DDR4-3200 1GX8 1.2V Samsung Chip -40~85C
Memory Type DRAM
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