Advantech 8G SO-DDR3-1600 512X8 1.35V SAM -40~85C AQD-SD3L8GN16-SGW

Description
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
  • 8G SO-DDR3-1600 512X8 1.35V SAM -40~85C - AQD-SD3L8GN16-SGW - Advantech
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Description
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance
Request a Quote Datasheet

Suppliers

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8G SO-DDR3-1600 512X8 1.35V SAM -40~85C - AQD-SD3L8GN16-SGW - Advantech
Advantech
Cincinnati, OH, United States
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C
AQD-SD3L8GN16-SGW
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C AQD-SD3L8GN16-SGW
8G SO-DDR3-1600 512X8 1.35V SAM -40~85C 30u" Gold Plating Thickness Anti-sulfurization resistance Samsung original chip Wide Temp. -40C to +85C 100% tested for stability, compatibility and performance

8G SO-DDR3-1600 512X8 1.35V SAM -40~85C

  • 30u" Gold Plating Thickness
  • Anti-sulfurization resistance
  • Samsung original chip
  • Wide Temp. -40C to +85C
  • 100% tested for stability, compatibility and performance
Buy Now Datasheet
Acme Chip Technology Co., Limited
Shenzhen, China
Memory Cards, Modules - Memory - Modules
AQD-SD3L8GN16-SGW
Memory Cards, Modules - Memory - Modules AQD-SD3L8GN16-SGW
MODULE DDR3 DRAM 8GB 204SODIMM

MODULE DDR3 DRAM 8GB 204SODIMM

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Technical Specifications

  Advantech Acme Chip Technology Co., Limited
Product Category Memory Modules Memory Modules
Product Number AQD-SD3L8GN16-SGW AQD-SD3L8GN16-SGW
Product Name 8G SO-DDR3-1600 512X8 1.35V SAM -40~85C Memory Cards, Modules - Memory - Modules
Memory Type DRAM DRAM
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