Infineon Technologies AG High Linearity RF Transistors BFR93A

NPN Silicon RF Transistor

Summary of Features

• For low-noise, high gain broadband amplifiers at collector currents from 2 mA to 30 mA
• Pb-free (RoHS compliant) package

Potential Applications

• Wireless Communications
• LNA in RF Front-end
• For various applications like cellular and cordless phones, DECT, Tuners, FM, and RF modems.

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• IRF4905S |
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• IRF5210 |
  P-Channel Power MOSFET
• IRF7343 |
  Dual MOSFET
• IRF9540N |
  P-Channel Power MOSFET
• IRLR024N |
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• BAT165 |
  Schottky Diodes
• BSP296N |
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• IKW50N65H5 |
  IGBT Discretes
• BSS806N |
  Small Signal/Small Power MOSFET

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Manufacturer: Infineon Technologies
Win Source Part Number: 095305-BFR93A
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 10.5dB to 15.5dB
Frequency - Transition: 6GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 1.5dB to 2.6dB @ 900MHz to 1.8GHz
Family Name: BFR93A
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: PG-SOT323-3
Maximum Current Collector: 90mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 12V
Typical Gain (hFE) (Min): 70 @ 30mA, 8V
Maximum Power Dissipation: 300mW
Alternative Parts (Cross-Reference): MMBR911LT1; 2SC4186T64; 2SC3356-A;
Introduction Date: December 12, 1996
ECCN: EAR99
Country of Origin: China, Malaysia
Estimated EOL Date: 2023
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance

NPN bipolar RF BFR93A 6GHz - Discrete Semiconductors - Bipolar Transistors

NPN bipolar RF BFR93A 6GHz - Discrete Semiconductors - Bipolar Transistors
Delivery on production packaging - Reel. This product is non-returnable.

NPN bipolar RF BFR93A 6GHz - Discrete Semiconductors - Bipolar Transistors