STMicroelectronics, Inc. TRANSISTORS - Transistors (BJT) - Arrays - ULN2064B ULN2064B

Description
Manufacturer: STMicroelectronics Win Source Part Number: 038520-ULN2064B Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 4 NPN Darlington (Quad) Family Name: ULN2064B Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 85°C (TA) Case / Package: 16-PowerDIP (20x7.10) Maximum Current Collector: 1.75A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.4V @ 2mA, 1.25A Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): TD62064AP(F,5,J,S); TD62064APG(5,J,S); TD62064APG; E-ULN2066B; ULN2068B; ULN2064B; Introduction Date: April 01, 1993 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Arrays - ULN2064B - 038520-ULN2064B - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors (BJT) - Arrays - ULN2064B
038520-ULN2064B
TRANSISTORS - Transistors (BJT) - Arrays - ULN2064B 038520-ULN2064B
Manufacturer: STMicroelectronics Win Source Part Number: 038520-ULN2064B Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: 4 NPN Darlington (Quad) Family Name: ULN2064B Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -20°C to 85°C (TA) Case / Package: 16-PowerDIP (20x7.10) Maximum Current Collector: 1.75A VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 1.4V @ 2mA, 1.25A Maximum Power Dissipation: 1W Alternative Parts (Cross-Reference): TD62064AP(F,5,J,S); TD62064APG(5,J,S); TD62064APG; E-ULN2066B; ULN2068B; ULN2064B; Introduction Date: April 01, 1993 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2028 Halogen Free: Not Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Application Field: Used in Power Management

Manufacturer: STMicroelectronics
Win Source Part Number: 038520-ULN2064B
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: 4 NPN Darlington (Quad)
Family Name: ULN2064B
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -20°C to 85°C (TA)
Case / Package: 16-PowerDIP (20x7.10)
Maximum Current Collector: 1.75A
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 1.4V @ 2mA, 1.25A
Maximum Power Dissipation: 1W
Alternative Parts (Cross-Reference): TD62064AP(F,5,J,S); TD62064APG(5,J,S); TD62064APG; E-ULN2066B; ULN2068B; ULN2064B;
Introduction Date: April 01, 1993
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2028
Halogen Free: Not Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management

Supplier's Site Datasheet
Bipolar Transistor Arrays - 497-2348-5-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays
497-2348-5-ND
Bipolar Transistor Arrays 497-2348-5-ND
Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)

Bipolar (BJT) Transistor Array 4 NPN Darlington (Quad) 50V 1.75A 1W Through Hole 16-PowerDIP (20x7.10)

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - ULN2064B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
ULN2064B
Discrete Semiconductor Products - Transistors - Bipolar (BJT) ULN2064B
TRANS 4NPN DARL 50V 1.75A 16DIP

TRANS 4NPN DARL 50V 1.75A 16DIP

Supplier's Site
 - 633638 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS. Transistor Type = NPN Maximum Continuous Collector Current = 1.75 A Maximum Collector Emitter Voltage = 50 V Package Type = PDIP Mounting Type = Through Hole Pin Count = 16 Transistor Configuration = Common Emitter Number of Elements per Chip = 4 Maximum Collector Emitter Saturation Voltage = 1.4 V Width = 7.1mm

Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS.
Transistor Type = NPN
Maximum Continuous Collector Current = 1.75 A
Maximum Collector Emitter Voltage = 50 V
Package Type = PDIP
Mounting Type = Through Hole
Pin Count = 16
Transistor Configuration = Common Emitter
Number of Elements per Chip = 4
Maximum Collector Emitter Saturation Voltage = 1.4 V
Width = 7.1mm

Supplier's Site
 - 633638P - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS. Transistor Type = NPN Maximum Continuous Collector Current = 1.75 A Maximum Collector Emitter Voltage = 50 V Package Type = PDIP Mounting Type = Through Hole Pin Count = 16 Transistor Configuration = Common Emitter Number of Elements per Chip = 4 Maximum Collector Emitter Saturation Voltage = 1.4 V Width = 7.1mm Delivery on production packaging - Tube. This product is non-returnable.

Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS.
Transistor Type = NPN
Maximum Continuous Collector Current = 1.75 A
Maximum Collector Emitter Voltage = 50 V
Package Type = PDIP
Mounting Type = Through Hole
Pin Count = 16
Transistor Configuration = Common Emitter
Number of Elements per Chip = 4
Maximum Collector Emitter Saturation Voltage = 1.4 V
Width = 7.1mm
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 9208975 - RS Components, Ltd.
Corby, Northants, United Kingdom
Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS. Transistor Type = NPN Maximum Continuous Collector Current = 1.75 A Maximum Collector Emitter Voltage = 50 V Package Type = PDIP Mounting Type = Through Hole Pin Count = 16 Transistor Configuration = Common Emitter Number of Elements per Chip = 4 Maximum Collector Emitter Saturation Voltage = 1.4 V Minimum Operating Temperature = -20 °C

Darlington transistor power drivers are high-voltage, high-current switch arrays containing multiple open-collector Darlington pairs and integral suppression diodes for inductive loads. The high current rating of each output is 500 mA or higher. The inputs are pinned opposite the outputs in the IC package to simplify the application board layout. The interface is standard logic level for TTL or CMOS.
Transistor Type = NPN
Maximum Continuous Collector Current = 1.75 A
Maximum Collector Emitter Voltage = 50 V
Package Type = PDIP
Mounting Type = Through Hole
Pin Count = 16
Transistor Configuration = Common Emitter
Number of Elements per Chip = 4
Maximum Collector Emitter Saturation Voltage = 1.4 V
Minimum Operating Temperature = -20 °C

Supplier's Site
Sheung Wan, Hong Kong
Darlington Transistors
ULN2064B
Darlington Transistors ULN2064B
Darlington Transistors 1.5 Amp Quad Switch

Darlington Transistors 1.5 Amp Quad Switch

Supplier's Site Datasheet
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 1 W, 1.5 A, Dip Rohs Compliant Stmicroelectronics - 26M4667 - Newark, An Avnet Company
Chicago, IL, United States
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 1 W, 1.5 A, Dip Rohs Compliant Stmicroelectronics
26M4667
Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 1 W, 1.5 A, Dip Rohs Compliant Stmicroelectronics 26M4667
Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 1 W, 1.5 A, DIP RoHS Compliant: Yes

Bipolar (BJT) Array Transistor, Darlington, NPN, 50 V, 1 W, 1.5 A, DIP RoHS Compliant: Yes

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited RS Components, Ltd. VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Darlington Transistors Transistors Bipolar RF Transistors Darlington Transistors Darlington Transistors Bipolar RF Transistors
Product Number 038520-ULN2064B 497-2348-5-ND ULN2064B 633638 ULN2064B 26M4667
Product Name TRANSISTORS - Transistors (BJT) - Arrays - ULN2064B Bipolar Transistor Arrays Discrete Semiconductor Products - Transistors - Bipolar (BJT) Darlington Transistors Bipolar (Bjt) Array Transistor, Darlington, Npn, 50 V, 1 W, 1.5 A, Dip Rohs Compliant Stmicroelectronics
Polarity NPN; 4 NPN Darlington (Quad) NPN NPN NPN
VCEO 50 volts 50 volts 50 volts
IC(max) 1750 milliamps 1750 milliamps
PD 1000 milliwatts
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