onsemi IGBT Transistors NGTB40N120S3WG

Description
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.
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Suppliers

Company
Product
Description
Supplier Links
 - 1349557P - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single Delivery on production packaging - Tube. This product is non-returnable.

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 160 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 454 W
Number of Transistors = 1
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 1349506 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Common Emitter

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 160 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 454 W
Number of Transistors = 1
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Common Emitter

Supplier's Site
 - 1349557 - RS Components, Ltd.
Corby, Northants, United Kingdom
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications. Maximum Continuous Collector Current = 160 A Maximum Collector Emitter Voltage = 1200 V Maximum Gate Emitter Voltage = ±30V Maximum Power Dissipation = 454 W Number of Transistors = 1 Package Type = TO-247 Mounting Type = Through Hole Channel Type = N Pin Count = 3 Transistor Configuration = Single

Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
Maximum Continuous Collector Current = 160 A
Maximum Collector Emitter Voltage = 1200 V
Maximum Gate Emitter Voltage = ±30V
Maximum Power Dissipation = 454 W
Number of Transistors = 1
Package Type = TO-247
Mounting Type = Through Hole
Channel Type = N
Pin Count = 3
Transistor Configuration = Single

Supplier's Site
Sheung Wan, Hong Kong
IGBT Transistors
NGTB40N120S3WG
IGBT Transistors NGTB40N120S3WG
IGBT Transistors IGBT 1200V 40A FS3 LOW VF

IGBT Transistors IGBT 1200V 40A FS3 LOW VF

Supplier's Site Datasheet
Single IGBTs - NGTB40N120S3WGOS-ND - DigiKey
Thief River Falls, MN, United States
IGBT Trench Field Stop 1200V 160A 454W Through Hole TO-247-3

IGBT Trench Field Stop 1200V 160A 454W Through Hole TO-247-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - NGTB40N120S3WG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
NGTB40N120S3WG
Discrete Semiconductor Products - Transistors - IGBTs NGTB40N120S3WG
IGBT 1.2KV 40A TO247-3

IGBT 1.2KV 40A TO247-3

Supplier's Site

Technical Specifications

  RS Components, Ltd. VAST STOCK CO., LIMITED DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number 1349557P NGTB40N120S3WG NGTB40N120S3WGOS-ND NGTB40N120S3WG
Product Name IGBT Transistors Single IGBTs Discrete Semiconductor Products - Transistors - IGBTs
Polarity N-Channel
IC(max) 160 amps
PD 454000 milliwatts
Package Type TO-247; TO-247 TO-247; TO-247-3
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