Integra Technologies, Inc. GaN L-Band Radar Transistor IGN1214S1000B

■ GaN on SiC HEMT Technology ■ POUT-PK ≥ 1000W @ 5us/1.5%/50V ■ 1.2-1.4GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=1.340′ (34.04mm), L=0.385′ (9.78mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture