Integra Technologies, Inc. GaN S-Band Radar Transistor IGN3135M250

■ GaN on SiC HEMT Technology ■ POUT-PK = 250W @ 300us/10%/50V ■ 3.1-3.5GHz Instantaneous Operating Frequency Range ■ Internal Impedance Pre-matched Device ■ Depletion Mode Device ■ Negative Gate Voltage and Bias Sequencing Required ■ Specified For Use Under Class AB Operation ■ Metal Based Package Sealed With Ceramic-Epoxy Lid ■ Gold Metallization System: Chip - Wire Bond - Package ■ Package Size: W=0.800′ (20.32mm), L=0.400′ (10.16mm) ■ 100% High Power RF Tested in Broadband RF Test Fixture