Infineon Technologies AG Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB160N04S4-H1 IPB160N04S4-H1

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Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB160N04S4-H1 - IPB160N04S4-H1 - Infineon Technologies AG
Neubiberg, Germany
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB160N04S4-H1
IPB160N04S4-H1
Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB160N04S4-H1 IPB160N04S4-H1
Summary of Features N-channel - Enhancement mode AEC qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested Benefits world's lowest RDS at 40V (on) highest current capability lowest switching and conduction power losses for highest thermal efficiency robust packages with superior quality and reliability Optimized total gate charge enables smaller driver output stages Potential Applications OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control. Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives. Simulation/SPICE-Mod el Designers who used this product also designed with BTS3160D | Classic HITFET™ 12V | Automotive Low-Side Switch TLE4946-2K | Magnetic switches TLE5012B E3005 | Angle sensors TLS105B0MB | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear IPG20N06S4L-26 | Automotive MOSFET TLE4998C4 | Linear sensors BSS83P | Small Signal/Small Power MOSFET TLE5012BD E1200 | Angle sensors IRS21844S | Gate Driver ICs BSP742R | Classic PROFET™ 12V | Automotive Smart High-Side Switch BTS462T | Classic PROFET™ 12V | Automotive Smart High-Side Switch SAK-TC212S-8F133SC AC | AURIX™ Family – TC21xSC (Wireless Charging) TLE4250-2G | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear TLE4906K | Magnetic switches BTS3160D | Classic HITFET™ 12V | Automotive Low-Side Switch TLE4946-2K | Magnetic switches TLE5012B E3005 | Angle sensors TLS105B0MB | Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear IPG20N06S4L-26 | Automotive MOSFET TLE4998C4 | Linear sensors BSS83P | Small Signal/Small Power MOSFET TLE5012BD E1200 | Angle sensors 1 2 3 4

Summary of Features

  • N-channel - Enhancement mode
  • AEC qualified
  • MSL1 up to 260°C peak reflow
  • 175°C operating temperature
  • Green product (RoHS compliant)
  • Ultra low Rds(on)
  • 100% Avalanche tested

Benefits

  • world's lowest RDS at 40V (on)
  • highest current capability
  • lowest switching and conduction power losses for highest thermal efficiency
  • robust packages with superior quality and reliability
  • Optimized total gate charge enables smaller driver output stages

Potential Applications

  • OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.
  • Thus OptiMOS-T2 40V products based on Infineon’s advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.

Simulation/SPICE-Model


Designers who used this product also designed with


  • BTS3160D |
    Classic HITFET™ 12V | Automotive Low-Side Switch
  • TLE4946-2K |
    Magnetic switches
  • TLE5012B E3005 |
    Angle sensors
  • TLS105B0MB |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • IPG20N06S4L-26 |
    Automotive MOSFET
  • TLE4998C4 |
    Linear sensors
  • BSS83P |
    Small Signal/Small Power MOSFET
  • TLE5012BD E1200 |
    Angle sensors
  • IRS21844S |
    Gate Driver ICs
  • BSP742R |
    Classic PROFET™ 12V | Automotive Smart High-Side Switch
  • BTS462T |
    Classic PROFET™ 12V | Automotive Smart High-Side Switch
  • SAK-TC212S-8F133SC AC |
    AURIX™ Family – TC21xSC (Wireless Charging)
  • TLE4250-2G |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • TLE4906K |
    Magnetic switches
  • BTS3160D |
    Classic HITFET™ 12V | Automotive Low-Side Switch
  • TLE4946-2K |
    Magnetic switches
  • TLE5012B E3005 |
    Angle sensors
  • TLS105B0MB |
    Linear Voltage Regulators for Automotive Applications | OPTIREG™ linear
  • IPG20N06S4L-26 |
    Automotive MOSFET
  • TLE4998C4 |
    Linear sensors
  • BSS83P |
    Small Signal/Small Power MOSFET
  • TLE5012BD E1200 |
    Angle sensors

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Supplier's Site Datasheet
 - 1107438P - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. AEC qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green Product (RoHS compliant). Channel Type = N Maximum Continuous Drain Current = 160 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.6 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 7 Delivery on production packaging - Reel. This product is non-returnable.

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. AEC qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green Product (RoHS compliant).
Channel Type = N
Maximum Continuous Drain Current = 160 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.6 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 7
Delivery on production packaging - Reel. This product is non-returnable.

Supplier's Site
 - 1107438 - RS Components, Ltd.
Corby, Northants, United Kingdom
Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. N-channel - Enhancement mode. AEC qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green Product (RoHS compliant). Channel Type = N Maximum Continuous Drain Current = 160 A Maximum Drain Source Voltage = 40 V Maximum Drain Source Resistance = 1.6 mOhms Maximum Gate Threshold Voltage = 4V Minimum Gate Threshold Voltage = 2V Maximum Gate Source Voltage = -20 V, +20 V Package Type = D2PAK (TO-263) Mounting Type = Surface Mount Pin Count = 7

Infineon’s new OptiMOS ™ -T2 has a range of energy efficient MOSFET transistors with CO2 reduction and electric drives. The new OptiMOS™ -T2 product family extends the existing families of OptiMOS™ -T and OptiMOS™. OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode. AEC qualified. MSL1 up to 260°C peak reflow. 175°C operating temperature. Green Product (RoHS compliant).
Channel Type = N
Maximum Continuous Drain Current = 160 A
Maximum Drain Source Voltage = 40 V
Maximum Drain Source Resistance = 1.6 mOhms
Maximum Gate Threshold Voltage = 4V
Minimum Gate Threshold Voltage = 2V
Maximum Gate Source Voltage = -20 V, +20 V
Package Type = D2PAK (TO-263)
Mounting Type = Surface Mount
Pin Count = 7

Supplier's Site
 - 1459577 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFET N-chan OptiMOS-T2 40V 160A TO263 - Discrete Semiconductors - MOSFET Transistors

MOSFET N-chan OptiMOS-T2 40V 160A TO263 - Discrete Semiconductors - MOSFET Transistors

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB160N04S4-H1 - 1186034-IPB160N04S4-H1 - Win Source Electronics
Yishun, Singapore
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB160N04S4-H1
1186034-IPB160N04S4-H1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB160N04S4-H1 1186034-IPB160N04S4-H1
Manufacturer: Infineon Technologies Win Source Part Number: 1186034-IPB160N04S4- H1 Manufacturer Homepage: www.infineon.com Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1186034-IPB160N04S4-H1
Manufacturer Homepage: www.infineon.com
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2

MOSFET N-Ch 40V 160A D2PAK-6 OptiMOS-T2

Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG RS Components, Ltd. Win Source Electronics VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IPB160N04S4-H1 1107438P 1186034-IPB160N04S4-H1 IPB160N04S4-H1
Product Name Power - MOSFET (Si/SiC) - Automotive MOSFET - IPB160N04S4-H1 TRANSISTORS - Transistors - FETs, MOSFETs - RF - IPB160N04S4-H1 MOSFET
Polarity N-Channel; N N-Channel
Transistor Technology / Material Si/SiC
VGS(off) 2 to 4 volts
rDS(on) 0.0016 ohms 0.0016 ohms
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