Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Complex type MOSFETs(P+N) are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | |
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Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
Product Number | EM6M2 | EM6M2 |
Product Name | 1.2V Drive Nch+Pch MOSFET | 1.2V Drive Nch+Pch MOSFET |
Polarity | N-Channel; P-Channel | N-Channel; P-Channel |
V(BR)DSS | 20 volts | 20 volts |
IDSS | 200 milliamps | 200 milliamps |
PD | 150 milliwatts | 150 milliwatts |