Metal-Oxide Semiconductor FET (MOSFET) Datasheets

Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
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Metal-Oxide Semiconductor FET (MOSFET) Datasheets From:
Headquarters
Infineon Technologies AG
Germany
New Yorker Electronics Co., Inc.
Northvale, NJ
ODG (Origin Data Global)
China
Richardson RFPD
United States
RS Components, Ltd.
United Kingdom
Texas Instruments
United States
Win Source Electronics
United States
Fuji Electric Corp. of America
United States
Qorvo
United States
Skyworks Solutions, Inc.
United States
TE Connectivity
United States
Acme Chip Technology Co., Limited
China
Karl Kruse GmbH & Co. KG
Germany
LCSC Electronics Technology (HK) Limited
China
Microchip Technology, Inc.
United States
PUI - Projections Unlimited, Inc.
United States
ROHM Semiconductor GmbH
Germany
ROHM Semiconductor USA, LLC
Santa Clara, CA
Shenzhen Shengyu Electronics Technology Limited
China
Solid State Devices, Inc.
La Mirada, CA
Toshiba America, Inc.
New York, NY
TRINAMIC Motion Control GmbH & Co. KG.
Germany
Universal Semiconductor, Inc.
San Jose, CA
Utmel Electronic Limited
China
VAST STOCK CO., LIMITED
Hong Kong
Wolfspeed
United States
Advanced Semiconductor, Inc.
United States
Advanced Thermal Solutions, Inc.
United States
AGMSEMI Core Control Source Electronic Technology Co., Ltd.
China
Allied Electronics, Inc.
Fort Worth, TX
Allpower Electronics Singapore PTE.LTD.
Singapore
Amphenol Corporation
United States
Ampleon
United States
Anhui Anmei Semiconductor Co., Ltd.
China
Anpec Electronics Corp.
Taiwan
Born Semiconductor (Shenzhen) Co., Ltd.
China
Bosch Sensortec GmbH
Germany
Bruckewell Technology Co., Ltd.
China
Calogic, LLC
United States
China Resources Microelectronics Limited
China
Columbia Research Labs, Inc.
Woodlyn, PA
Cree, Inc.
Durham, NC
D3 Semiconductor, LLC
United States
DIODES Incorporated
United States
DOWOSEMI Technology Co., Ltd.
China
EPC Space
Haverhill, MA
Formosa Microsemi Co., Ltd.
Taiwan
Foshan Blue Rocket Electronics Co.,Ltd.
China
Fuji Electric Global
Japan
FuxinSemi Semiconductor (Shenzhen) Co., Ltd.
China
GaN Systems Inc.
Canada
GeneSiC Semiconductor, Inc.
United States
Goodwork Semiconductor Co., Ltd.
Taiwan
Guangdong Juxing Electronic Technology Co., Ltd.
China
Guangdong Shikues Micro Industrial Co., Ltd
China
Guangdong YFW Electronics Co, Ltd.
China
Hangzhou Silan Microelectronics Co., Ltd.
China
Honeywell Aerospace
United States
Hunan Jinxin Technology Co., Ltd.
Changsha City, Hunan
Injoinic Technology Corp.
China
Integra Technologies
United States
Integrated Device Technology
San Jose, CA
Intel Corporation
Santa Clara, CA
Inventchip Technology
China
IXYS Corporation
United States
IXYS Integrated Circuits Division
United States
JCET Group
Milpitas, CA
Jiangsu Changjing Electronics Technology Co., Ltd
China
Jiangsu High Diode Semiconductor Co., Ltd.
China
Jiangsu Weida Semiconductor Co., Ltd.
China
JSMicro Semiconductor Co., Ltd.
China
KEC Corporation
Korea, South
Kexin Co., Ltd.
China
Kionix, Inc.
Ithaca, NY
Korea SemiHow Co., Ltd
Korea, South
LAPIS Semiconductor
Japan
Leshan Radio Company, Ltd.
China
Luguang Electronic Technology CO.,LTD.
China
MACOM
Lowell, MA
MEMSIC, Inc.
United States
Messenko Semiconductor
Taiwan
Microsemi Corp.
United States
MicroWave Technology, Inc.
United States
Mitsubishi Corporation
Japan
Monolithic Power Systems, Inc.
United States
Motorola Solutions, Inc.
United States
Nanjing Micro One Electronics Inc.
China
NCEPOWER 
China
NEC Corporation
United States
Nidec Copal (USA) Corporation
Torrance, CA
NXP Semiconductors
United States
NXP USA, Inc.
Austin, TX
OmniVision Technologies, Inc.
United States
onsemi
United States
Panasonic
Newark, NJ
Parallax, Inc.
United States
Powerex, Inc.
United States
pSemi
United States
RichTek Technology Corporation
Taiwan
ROHM Co., Ltd.
Japan
Royal Philips Electronics
United States
Sanyo Machine America
United States
Semikron, Inc.
Hudson, NH
Semipower Technology Co.,Ltd.
China
SGS, Inc.
United States
Shandong Jingdao Microelectronics Co., Ltd.
China
Shanghai Belling Co., Ltd.
China
Shanghai Leiditech Electronic Technology Co, Ltd.
China
Shenzhen All Power Semiconductor Co.,Ltd
China
Shenzhen Hottech Electronics Co., Ltd.
China
Shenzhen Huaxuanyang Electronic Co., Ltd.
China
Shenzhen Luguang Electronic Technology Co., Ltd.
China
ShenZhen SlkorMicro Semicon Co., Ltd.
China
Siemens AG
Germany
SINO-IC Microelectronic Co., Ltd.
China
Sinopower Semiconductor Inc.
Taiwan
StarPower Europe AG
Switzerland
STMicroelectronics, Inc.
United States
Taiwan Semiconductor Manufacturing Company, Ltd.
United States
Taizhou Electronics Co., Ltd.
China
TE Connectivity ™
Berwyn, PA
Techcode Semiconductor, Inc.
China
Texas Instruments High-Performance Analog
United States
Toshiba Corporation
Japan
Toshiba Imaging Systems Division
Irvine, CA
Toshiba Semiconductor & Storage Products
United States
TT Electronics
United States
Unisonic Technologies Co., Ltd.
China
uPI Semiconductor Corp.
Taiwan
Vishay Intertechnology, Inc.
United States
Vishay Precision Group
United States
WAVEPIA Co., Ltd.
Korea
WINSOK Semiconductor
China
Wisdom Technologies Int’l Co.
China
Wolfson Microelectronics Plc.
United Kingdom
Yangzhou Yangjie Electronic Technology Co., Ltd.
China