onsemi Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD809G

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Suppliers

Company
Product
Description
Supplier Links
 - 7905296 - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors

NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors

Supplier's Site
 - 7905296P - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors Delivery on production packaging - Tube. This product is non-returnable.

NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors
Delivery on production packaging - Tube. This product is non-returnable.

Supplier's Site
 - 1453387 - RS Components, Ltd.
Corby, Northants, United Kingdom
NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors

NPN Power Transistor 80V 10A 90W TO220 - Discrete Semiconductors - Bipolar Transistors

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BD809G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BD809G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BD809G
TRANS NPN 80V 10A TO220

TRANS NPN 80V 10A TO220

Supplier's Site
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single - 1171261-BD809G - Win Source Electronics
Yishun, Singapore
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single
1171261-BD809G
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single 1171261-BD809G
Win Source Part Number: 1171261-BD809G Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single Package: Tube Standard Package: 50 Power - Max: 90 W Voltage - Collector Emitter Breakdown (Max): 80 V Current - Collector (Ic) (Max): 10 A Transistor Type: NPN Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A Current - Collector Cutoff (Max): 1mA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V Frequency - Transition: 1.5MHz Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220 Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): BD809G.; ECCN: EAR99 Fake Threat In the Open Market: 49 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: onsemi Other Names: BD809G-ND,BD809GOS,2 156-BD809G-OS,ONSONS BD809G Base Product Number: BD809 Product Status: Obsolete

Win Source Part Number: 1171261-BD809G
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 50
Power - Max: 90 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 1.1V @ 300mA, 3A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 4A, 2V
Frequency - Transition: 1.5MHz
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): BD809G.;
ECCN: EAR99
Fake Threat In the Open Market: 49 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Other Names: BD809G-ND,BD809GOS,2156-BD809G-OS,ONSONSBD809G
Base Product Number: BD809
Product Status: Obsolete

Supplier's Site Datasheet
Single Bipolar Transistors - BD809GOS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
BD809GOS-ND
Single Bipolar Transistors BD809GOS-ND
Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220

Bipolar (BJT) Transistor NPN 80V 10A 1.5MHz 90W Through Hole TO-220

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BD809G
Bipolar Transistors - BJT BD809G
Bipolar Transistors - BJT 10A 80V 90W NPN

Bipolar Transistors - BJT 10A 80V 90W NPN

Supplier's Site Datasheet
 - BD809G - Rochester Electronics
Newburyport, MA, United States
BD809 - Power Bipolar Transistor, 10A, 80V, NPN, TO-220AB, 3 Pin

BD809 - Power Bipolar Transistor, 10A, 80V, NPN, TO-220AB, 3 Pin

Supplier's Site Datasheet

Technical Specifications

  RS Components, Ltd. Shenzhen Shengyu Electronics Technology Limited Win Source Electronics DigiKey VAST STOCK CO., LIMITED Rochester Electronics
Product Category Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Power MOSFET
Product Number 7905296 BD809G 1171261-BD809G BD809GOS-ND BD809G BD809G
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Single Bipolar Transistors Bipolar Transistors - BJT
Polarity NPN NPN NPN
Package Type TO-220; TO-220 TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220AB
IC(max) 10000 milliamps 10000 milliamps 10000 milliamps
VCEO 80 volts 80 volts
VCBO 80 volts
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