Renesas Electronics Corporation 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-12

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256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM - X28HC256JZ-12 - Renesas Electronics Corporation
Milpitas, CA, USA
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM
X28HC256JZ-12
256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM X28HC256JZ-12
The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory. The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decorati on: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down. Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

The X28HC256 is a second generation high performance CMOS 32k x 8 EEPROM. It is fabricated with Intersil’s proprietary, textured poly floating gate technology, providing a highly reliable 5V only nonvolatile memory.
The X28HC256 supports a 128-byte page write operation, effectively providing a 24µs/byte write cycle, and enabling the entire memory to be typically rewritten in less than 0.8s. The X28HC256 also features span style="text-decoration: overline"DATA/span polling and Toggle bit polling, two methods of providing early end of write detection. The X28HC256 also supports the JEDEC standard software data protection feature for protecting against inadvertent writes during power-up and power-down.
Endurance for the X28HC256 is specified as a minimum 100,000 write cycles per byte and an inherent data retention of 100 years

Supplier's Site Datasheet
Yishun, Singapore
Integrated Circuits (ICs) Memory Memory
Integrated Circuits (ICs) Memory Memory
Alternative Parts (Cross-Reference): Cross Manufacturer: Renesas Electronics America Inc Category: Integrated Circuits (ICs) Memory Memory Package: Tube Product Status: Active Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kbit Memory Organization: 32K x 8

Alternative Parts (Cross-Reference): Cross
Manufacturer: Renesas Electronics America Inc
Category: Integrated Circuits (ICs) Memory Memory
Package: Tube
Product Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kbit
Memory Organization: 32K x 8

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
X28HC256JZ-12
Integrated Circuits (ICs) - Memory - Memory X28HC256JZ-12
32K X 8 EEPROM,CMOS,HIGHSPEE D,32

32K X 8 EEPROM,CMOS,HIGHSPEED,32

Supplier's Site
Memory - X28HC256JZ-12 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
EEPROM Memory IC 256Kbit Parallel 120 ns 32-PLCC (13.97x11.43)

EEPROM Memory IC 256Kbit Parallel 120 ns 32-PLCC (13.97x11.43)

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Technical Specifications

  Renesas Electronics Corporation Win Source Electronics Acme Chip Technology Co., Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number X28HC256JZ-12 X28HC256JZ-12 X28HC256JZ-12
Product Name 256k, 32k x 8-Bit, 5V, Byte Alterable EEPROM Integrated Circuits (ICs) Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category EEPROM EEPROM; Non-Volatile EEPROM; EEPROM EEPROM; EEPROM
Access Time 90 ns 120 ns
Package Type PDIP28, PLCC32, SOIC28 32-LCC (J-Lead)
Operating Current 60 mA
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