Broadcom Inc. 1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM TO295Jxxx

Description
The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM - TO295Jxxx - Broadcom Inc.
San Jose, CA, USA
1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM
TO295Jxxx
1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM TO295Jxxx
The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

The Avago TO295Jxxx is an hermetic sealed TO can device with integral photo diode for optical output monitoring using 1550nm single mode edge-emitting laser diode chip for use in uncooled applications up to 2.7Gb/sec. It supports CWDM wavelengths from 1470 to 1610nm. The laser is mounted into a TO-56 header and hermetic sealed with a specific lens cap. The laser design is a capped mesa buried hetero-structure (CMBH) grown on n-type substrate with multi-quantum well (MQW) active layers and distributed-feedback (DFB) grating layer. The facets are coated with an anti-reflectance layer on the front facet and a high reflectance coating on the rear facet.

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Technical Specifications

  Broadcom Inc.
Product Category Diode Lasers
Product Number TO295Jxxx
Product Name 1.5 µm DFB Chip in TO-can for Uncooled Applications, CWDM
Laser Type Laser Diodes
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