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Alliance Memory, Inc. Memory AS6C2016-55BINTR

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Company
Product
Description
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Memory - AS6C2016-55BINTR-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55ns 48-TFBGA (6x8)

Supplier's Site Datasheet
Memory - SRAM - AS6C2016-55BINTR - 861938-AS6C2016-55BINTR - Win Source Electronics
Yishun, Singapore
Memory - SRAM - AS6C2016-55BINTR
861938-AS6C2016-55BINTR
Memory - SRAM - AS6C2016-55BINTR 861938-AS6C2016-55BINTR
Manufacturer: Alliance Memory, Inc. Win Source Part Number: 861938-AS6C2016-55BI NTR Operating Temperature Range: -40°C ~ 85°C (TA) Features: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55 ns 48-TFBGA (6x8) Package: 48-TFBGA Package: Reel - TR Mounting: Surface Mount Family Name: AS6C2016 Categories: Integrated Circuits (ICs) Case / Package: 48-TFBGA (6x8) ECCN: 3A991B2A Popularity: Medium Fake Threat In the Open Market: 88 pct. Supply and Demand Status: Limited Quantity per package: 2000 MSL Level: 3 (168 Hours) Estimated Pruduction Lead Time: 15 Weeks REACH Status: REACH Unaffected HTSUS: 8542.32.0041

Manufacturer: Alliance Memory, Inc.
Win Source Part Number: 861938-AS6C2016-55BINTR
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SRAM - Asynchronous Memory IC 2Mb (128K x 16) Parallel 55 ns 48-TFBGA (6x8)
Package: 48-TFBGA
Package: Reel - TR
Mounting: Surface Mount
Family Name: AS6C2016
Categories: Integrated Circuits (ICs)
Case / Package: 48-TFBGA (6x8)
ECCN: 3A991B2A
Popularity: Medium
Fake Threat In the Open Market: 88 pct.
Supply and Demand Status: Limited
Quantity per package: 2000
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 15 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0041

Supplier's Site Datasheet
Memory - AS6C2016-55BINTR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-TFBGA (6x8)

SRAM - Asynchronous Memory IC 2Mbit Parallel 55 ns 48-TFBGA (6x8)

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - AS6C2016-55BINTR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
AS6C2016-55BINTR
Integrated Circuits (ICs) - Memory - Memory AS6C2016-55BINTR
IC SRAM 2MBIT PARALLEL 48TFBGA

IC SRAM 2MBIT PARALLEL 48TFBGA

Supplier's Site
IC SRAM 2MBIT PARALLEL 48TFBGA

IC SRAM 2MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM - AS6C2016-55BINTR - Karl Kruse GmbH & Co. KG
Kaarst, Germany
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM
AS6C2016-55BINTR
SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM AS6C2016-55BINTR
Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Karl Kruse GmbH & Co. KG
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number AS6C2016-55BINTR-ND 861938-AS6C2016-55BINTR AS6C2016-55BINTR AS6C2016-55BINTR AS6C2016-55BINTR AS6C2016-55BINTR
Product Name Memory Memory - SRAM - AS6C2016-55BINTR Memory Integrated Circuits (ICs) - Memory - Memory Memory SRAM 2M, 3.3V, 55ns 128K x 16 Asyn SRAM
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000 kbits 2000 kbits 2000 kbits 2000 kbits
Package Type 48-TFBGA BGA; 48-TFBGA (6x8) BGA; 48-TFBGA TFBGA48
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