Youtai Semiconductor Co., Ltd Single FETs, MOSFETs FDP8D5N10C

The FDP8D5N10C is a 100V N-channel MOSFET designed for high-current switching applications with low on-state resistance and soft body diode performance. It is packaged in a TO-220 case with dimensions of 10.3 mm maximum length, 16.2 mm maximum width, and 5.8 mm maximum height. The device has a continuous drain current rating of 76 A at 25°C and a pulsed drain current of 304 A. The drain-to-source on-resistance is 7.4 to 8.5 mΩ at Vဴ=10 V. Thermal resistance from junction to case is 1.4 °C/W, and junction-to-ambient is 62.5 °C/W. The part is RoHS compliant and supports single pulse avalanche energy up to 181 mJ.