Yangzhou Yangjie Electronic Technology Co., Ltd. Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors S8050-H

Description
Win Source Part Number: 1357239-S8050-H Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) Mfr: Yangzhou Yangjie Electronic Technology Co.,Ltd Product Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92 Mounting Type: Through Hole REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 300 mW
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Description
Win Source Part Number: 1357239-S8050-H Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) Mfr: Yangzhou Yangjie Electronic Technology Co.,Ltd Product Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92 Mounting Type: Through Hole REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 300 mW
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Suppliers

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Product
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Supplier Links
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors - 1357239-S8050-H - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
1357239-S8050-H
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors 1357239-S8050-H
Win Source Part Number: 1357239-S8050-H Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Package: Tape & Reel Temperature Range - Operating: 150°C (TJ) Fake Threat In the Open Market: 47 pct. MSL Level: 1 (Unlimited) Mfr: Yangzhou Yangjie Electronic Technology Co.,Ltd Product Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92 Mounting Type: Through Hole REACH Status: REACH Unaffected ECCN: EAR99 Transistor Type: NPN Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 25 V DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 150MHz Power - Max: 300 mW

Win Source Part Number: 1357239-S8050-H
Category: Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors
Package: Tape & Reel
Temperature Range - Operating: 150°C (TJ)
Fake Threat In the Open Market: 47 pct.
MSL Level: 1 (Unlimited)
Mfr: Yangzhou Yangjie Electronic Technology Co.,Ltd
Product Status: Active
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92
Mounting Type: Through Hole
REACH Status: REACH Unaffected
ECCN: EAR99
Transistor Type: NPN
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 1V
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 150MHz
Power - Max: 300 mW

Buy Now Datasheet
Single Bipolar Transistors - S8050-H - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
S8050-H
Single Bipolar Transistors S8050-H
SOT-23 NPN 0.3W 0.5A 40V Transis

SOT-23 NPN 0.3W 0.5A 40V Transis

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global)
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 1357239-S8050-H S8050-H
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single Bipolar Transistors Single Bipolar Transistors
Polarity NPN NPN; NPN
Package Type TO-92; SOT3; SOT23 SOT23; SOT-23
IC(max) 500 milliamps 500 milliamps
Power Gain 200 dB
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