Yageo USA Single FETs, MOSFETs XP4P018M

XP4P018M is a p-channel enhancement mode power MOSFET designed for efficient switching in low-voltage applications such as DC/DC converters. It is housed in an SO-8 package with dimensions of 5.05 mm nominal length, 6.00 mm nominal width, and 1.55 mm nominal height. The device has a drain-source voltage rating of -40 V, a continuous drain current of -9.4 A at 25°C, and a maximum on-resistance of 18 mΩ at -10 V gate-source voltage. It supports a total gate charge of up to 48 nC and has a single pulse avalanche energy of 18 mJ. The part is RoHS compliant and halogen-free, with an operating junction temperature range of -55°C to 150°C and a maximum thermal resistance of 50°C/W. It meets AEC-Q200 qualification standards.