Yageo USA FET, MOSFET Arrays XP3C011M

XP3C011M is a dual MOSFET device integrating an N-channel and P-channel enhancement mode transistor in an SO-8 package, sized 5.05 mm x 6.00 mm, designed for efficient power switching applications. The N-channel device has a 30 V drain-source breakdown voltage and a maximum on-resistance of 10 mΩ at 10 V gate drive, while the P-channel device has a -30 V rating and a maximum on-resistance of 22 mΩ. Both devices support a continuous drain current of 8.6 A and -6.2 A at 70 °C, with a pulsed current capability of 40 A and -30 A. The device features a total gate charge of 10 nC for the N-channel and 13 nC for the P-channel, and a maximum thermal resistance of 62.5 °C/W. It is RoHS compliant and halogen-free, with an operating junction temperature range of -55 °C to 150 °C.