Yageo USA Single FETs, MOSFETs XP2N030EN

XP2N030EN is an N-channel enhancement mode power MOSFET designed for low-voltage switching applications such as DC/DC converters. It is packaged in an SOT-23S with dimensions of 2.80 to 3.10 mm in length, 1.20 to 1.40 mm in width, and 0.80 to 1.20 mm in height. The device has a drain-source voltage rating of 20 V, a continuous drain current of 5.3 A at 25°C with a gate-source voltage of 4.5 V, and a maximum on-resistance of 35 mΩ at 4.5 V gate drive. It supports a gate threshold voltage between 0.5 V and 1.25 V, with total gate charge up to 10.4 nC and thermal resistance of 100 °C/W. The part is RoHS compliant and halogen-free, with an operating junction temperature range of -55 °C to 150 °C.