Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6" aluminum nitride wafers and 8" AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera's Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling.According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements.Feature
sHigh melting pointHigh electrical insulationLowdielect
ric constantHigher mechanical strengthSuperior corrosion resistance against molten metalThermal and chemicalstabilityHig
h thermal conductivity (170-220w/mk)Similar coefficient of thermal expansion to that of silicon (si)ApplicationsSemi
conductor manufacturingMicrowa
ve power amplifierRf powerand switchHigh temperature power electronicsLaser diode dispersionoptoelectr
onic devicesHigh power and high frequency electronic devicesMOSFET, IGBTpower modulesLed packages for cooling and protecting circuits
Innovacera standard aluminum nitride wafer diameters are from 50.8 mm (2 inch) to 200 mm (8 inch) ; mostly use are 6" aluminum nitride wafers and 8" AlN wafer substrates . AlN Wafers can be produced in various thicknesses from 0.125mm to 1mm with polished or lapped sides, customized sizes or request are also available.Aluminum Nitride (AIN) materials play a important roles in the semiconductor industry, the similarities between its thermal profile and that of silicon has made an ideal choice for wafer-related semiconductor applications. Innovacera's Aluminum nitride wafers have high reliability of Si chip and thermal heat cycling.According to direct wafer bonding technology, polished semiconductor wafers can be bonded together without adhesives. Direct wafer bonding requires very flat and high smooth surface (Ra≤0.05um), Innovacera AlN wafers substrate can meet this requirements.FeaturesHigh melting pointHigh electrical insulationLowdielectric constantHigher mechanical strengthSuperior corrosion resistance against molten metalThermal and chemicalstabilityHigh thermal conductivity (170-220w/mk)Similar coefficient of thermal expansion to that of silicon (si)ApplicationsSemiconductor manufacturingMicrowave power amplifierRf powerand switchHigh temperature power electronicsLaser diode dispersionoptoelectronic devicesHigh power and high frequency electronic devicesMOSFET, IGBTpower modulesLed packages for cooling and protecting circuits
